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Part: 57C43C-45
Category:
Description: High Speed 4k X 8 CMOS Prom/rPROM
Company: ST Microelectronics, Inc.
Datasheet: Download 57C43C-45 datasheet File size : 115 kB
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Datasheet text preview:
WS57C43C
HIGH SPEED 4K x 8 CMOS PROM/RPROM
KEY FEATURES
· Ultra-Fast Access Time
-- t ACC = 25 ns -- t CS = 12 ns
· Pin Compatible with 4K x 8 Bipolar PROMs · Immune to Latch-UP
-- Up to 200 mA
· Low Power Consumption · Fast Programming
· ESD Protection Exceeds 2000 V · Available in 300 Mil DIP and PLDCC
GENERAL DESCRIPTION
The WS57C43C is a High Performance 32K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C43C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which cannot be erased, every WS5743C in a windowed package is 100% tested with worst case test patterns both before and after assembly. The WS57C43C is configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are currently using Bipolar PROMs, or its predecessor, the WS57C43B.
BLOCK DIAGRAM
EPROM ARRAY
PIN CONFIGURATION
TOP VIEW
7 A5 - A11 ROW ADDRESSES
ROW DECODER
Chip Carrier
32,768 BITS
CERDIP/Plastic DIP
NC
A5 A 6 A 7
5 A0 - A4 COLUMN ADDRESSES
VCC A8 A9
COLUMN DECODER
SENSE AMPLIFIERS
A4 A3 A2 A1 A0 NC O0
CS1/ VPP
432 28 27 26 1 5 25 6 24 7 23 8 22 9 21 10 20 11 19 12 13 14 15 16 17 18 O1 O2 NC O3 O4 O5
A7 A6 A5 A10 A4 CS1/VPP A3 A11 A2 CS2 A1 NC A0 O7 O0 O6 O1 O2 GND
1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
VC C A8 A9 A10 CS1/VPP A11 CS2 O7 O6 O5 O4 O3
CS2
GND
8
OUTPUTS
PRODUCT SELECTION GUIDE
PARAMETER Address Access Time (Max) CS to Output Valid Time (Max) 57C43C-25 25 ns 12 ns 57C43C-35 35 ns 20 ns 57C43C-45 45 ns 25 ns 57C43C-55 55 ns 25 ns 57C43C-70 70 ns 25 ns
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2-31
WS57C43C
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature....65° to + 150°C Voltage on any Pin with Respect to Ground ... 0.6V to +7V VPP with Respect to Ground..........0.6V to + 14V ESD Protection ........> 2000V
MODE SELECTION
PINS MODE Read Output Disable Output Disable Program Program Verify CS1/ VPP VI L VI H X VPP VI L CS2 VI H X VI L X VI H VCC VCC VCC VCC VCC VCC OUTPUTS DOUT High Z High Z DI N DOUT
*NOTICE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability.
OPERATING RANGE
RANGE Commercial Industrial Military TEMPERATURE 0°C to +70°C 40°C to +85°C 55°C to +125°C VCC +5V ± 10% +5V ± 10% +5V ± 10%
DC READ CHARACTERISTICS Over Operating Range. (See Above)
SYMBOL VIL VIH VOL VOH ICC1 PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Active Current (CMOS) (Note 3) (Note 3) IOL = 16 mA IOH = 4 mA VCC = 5.5 V, f = 0 MHz (Note 1), Output Not Loaded Add 3 mA/MHz for AC Operation VCC = 5.5 V, f = 0 MHz (Note 1), Output Not Loaded Add 3 mA/MHz for AC Operation VIN = 5.5V or Gnd VOUT = 5.5 V or Gnd Comm'l Industrial Military Comm'l Industrial Military 10 10 2.4 30 35 35 40 50 50 10 10 TEST CONDITIONS MIN 0.1 2.0 MAX 0.8 VCC + 0.3 0.4 UNITS V V V V mA mA mA mA mA mA µA µA
ICC2
VCC Active Current (TTL) Input Leakage Current Output Leakage Current
ILI ILO
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V. 2. TTL inputs: VIL 0.8V, VIH 2.0V. 3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment.
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WS57C43C
AC READ CHARACTERISTICS Over Operating Range. (See Above)
PARAMETER SYMBOL 57C43C-25 57C43C-35 57C43C-45 57C43C-55 57C43C-70
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
UNITS
Address to Output Delay CS1 to Output Delay Output Disable to Output Float* Address to Output Hold
tACC tCS tDF tOH 0
25 12 12 0
35 20 25 0
45 25 25 0
55 25 25 0
70 25 ns 25
*Sampled, Not 100% Tested.
AC READ TIMING DIAGRAM
ADDRESSES
VALID tACC tOH
CS tCS OUTPUTS VALID tDF
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WS57C43C
CAPACITANCE (4) TA = 25°C, f = 1 MHz
SYMBOL CIN C OUT C VPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance CONDITIONS VI N = 0V VOUT = 0V VPP = 0 V TYP (5) 4 8 18 MAX 6 12 25 UNITS pF pF pF
NOTES: 4. This parameter is only sampled and is not 100% tested. 5.Typical values are for TA = 25°C and nominal supply voltages.
TEST LOAD (High Impedance Test Systems)
A.C. TESTING INPUT/OUTPUT WAVEFORM
98 2.01 V D.U.T. 3.0 1.5 0.0 30 pF (INCLUDING SCOPE AND JIG CAPACITANCE)
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a logic "0." Timing measurements are made at 1.5 V for input and output transitions in both directions. NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures.
TEST POINTS
1.5
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WS57C43C
NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE
1.60 40.0 35.0 1.40 30.0 NORMALIZED I CC DELTA Taa (ns) 1.20 25.0 20.0 15.0 10.0 5.0 0.60 4.0 4.5 5.0 5.5 6.0 SUPPLY VOLTAGE ( V ) 0.0
TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING
1.00
0.80
0.0
200
400
600
800
1000
CAPACITANCE ( pF )
NORMALIZED Ta a vs. AMBIENT TEMPERATURE
1.6 1.2
NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE
1.4 1.1 NORMALIZED Taa 1.2 NORMALIZED I CC
1.0
1.0
0.9 0.8
0.6 -55 -35 -15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C )
0.8 -55 -35 -15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C)
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Others parts begin by 57
57-1
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