HIGH SPEED: tPD 4.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC 8 µA (MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL 24 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(OPR) to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 16244 IMPROVED LATCH-UP IMMUNITY
DESCRIPTION The is an advanced high-speed CMOS 16-BIT BUS BUFFER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. Any nG output control governs four BUS BUFFERS. Output Enable inputs (nG) tied together give full 16 bit operation. When nG is LOW, the outputs are enabled. When nG is HIGH, the output are in high impedance state. The device is designed to be used with 3-state memory address drivers, etc.
PIN No SYMBOL 1A4 2G GND VCC NAME AND FUNCTION Output Enable Input Data Outputs Data Outputs Data Outputs Data Outputs Output Enable Input Output Enable Input Data Outputs Data Outputs Data Outputs Data Outputs Output Enable Input Ground (0V) Positive Supply Voltage
Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to VCC +150 300 Unit mA °C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (note 1) VCC or 5.5 Parameter Value 0 to VCC 0 to VCC to 8 Unit V °C ns/V