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Details, datasheet, quote on part number:74LX1G00CTR
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Datasheet text preview:
74LX1G00
SINGLE 2-INPUT NAND GATE
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5V TOLERANT INPUTS H IGH SPEED: tPD = 4.7ns (MAX.) at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPED ANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 5.5V (1.2V Data Retention) IMPROVED LATC H-U P IMMUNITY
SOT23-5L
SOT323-5L
O RDE R CO DE S
PACKAGE SOT23-5L SOT323-5L T&R 74LX1G00STR 74LX1G00CTR
DESCRIPTION The 74LX1G00 is a low voltage CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS t ec hnol ogy . The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge.
PIN CONNECTION AND IEC LOGIC SYMB OLS
October 2002
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74LX1G00
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No 1 2 4 3 5 SYMBOL 1A 1B 1Y GND VCC NAME AND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L L H H B L H L H Y H H H L
AB SOLUTE MAXIMUM RATINGS
Symbol VCC VI VO VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage (VCC = 0V) DC Output Voltage (High or Low State) (note 1) DC Input Diode Current DC Output Diode Current (note 2) DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter² Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 50 - 50 ± 50 ± 50 -65 to +150 300 Unit V V V V mA mA mA mA °C °C
ICC or IGND DC VCC or Ground Current per Supply Pin
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO VCC
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74LX1G00
RECOMMENDED OPERA TING CONDITIONS
Symbol VCC VI VO VO IOH, IOL IOH, IOL IOH, IOL IOH, IOL IOH, IOL Top dt/dv Supply Voltage (note 1) Input Voltage Output Voltage (VCC = 0V) Output Voltage (High or Low State) High or Low Level Output Current (VCC = 4.5 to 5.5V) High or Low Level Output Current (VCC = 3.0 to 3.6V) High or Low Level Output Current (VCC = 2.7 to 3.0V) High or Low Level Output Current (VCC = 2.3 to 2.7V) High or Low Level Output Current (VCC = 1.65 to 2.3V) Operating Temperqture Input Rise and Fall Time (note 2) Parameter Value 1.65 to 5.5 0 to 5.5 0 to 5.5 0 to VCC ± 32 ± 24 ± 12 ±8 ±4 -55 to 125 0 to 10 Unit V V V V mA mA mA mA mA °C ns/V
1) Truth T able guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V
DC SPEC IFICATION
Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 3.0 to 5.5 VIL Low Level Input Voltage 1.65 to 1.95 2.3 to 2.7 3.0 to 5.5 VOH High Level Output Voltage 1.65 to 4.5 1.65 2.3 3.0 4.5 VOL Low Level Output Voltage 1.65 to 4.5 1.65 2.3 3.0 4.5 II Ioff ICC Input Leakage Current Power Off Leakage Current Quiescent Supply Current 1.65 to 5.5 0 1.65 to 5.5 IO=-100 µA IO=-4 mA IO=-8 mA IO=-16 mA IO=-24 mA IO=-32 mA IO=100 µA IO=4 mA IO=8 mA IO=16 mA IO=24 mA IO=32 mA VI = 0 to 5.5V VI or VO = 5.5V VI = VCC or GND VCC-0.1 1.2 1.9 2.4 2.2 3.8 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 10 10 -40 to 85 °C Min. 0.75VCC 0.7VCC 0.7VCC 0.25VCC 0.3VCC 0.3VCC VCC-0.1 1.2 1.9 2.4 2.2 3.8 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 10 10 µA µA µA V V Max. Value -55 to 125 °C Min. 0.75VCC 0.7VCC 0.7VCC 0.25VCC 0.3VCC 0.3VCC V V Max. Unit
VIH
High Level Input Voltage
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74LX1G00
AC ELECTRICAL C HARACTERISTICS (Input tr = tf = 3ns)
Test Condition Symbol Parameter V CC (V) 1.65 to 1.95 2.3 to 2.7 3.0 to 3.6 4.5 to 5.5 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 CL (pF) RL () ts = tr (ns) -40 to 85 °C Min. 2 2 1 1 2 2 1 1 1 Max. 12.0 7.0 4.7 4.1 13.0 7.5 5.6 5.2 4.5 Value -55 to 125 °C Min. 2 2 1 1 2 2 1 1 1 Max. 12.0 7.0 4.7 4.1 13.0 7.5 5.6 5.2 4.5 Unit
tPLH tPHL
Propagation Delay Time
15
1 M
3.0
30 30 50 50 50
1000 500 500 500 500
2.0 2.0 2.5 2.5 2.5
ns
CA PACITIVE CHARA CTERISTICS
Test Condition Symbol Parameter V CC (V) 0 1.8 2.5 3.3 fIN = 10MHz Value TA = 25 °C Min. Typ. 4 16 18 20 Max. pF pF Unit
C IN CPD
Input Capacitance Power Dissipation Capacitance (note 1)
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
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74LX1G00
TEST CIRCUIT
RT = ZOUT of pulse generator (typically 50)
TEST CIRCUIT AND WAVEFOR M SYMBOL VALUE
Symbol 1.65 to 1.95V CL RL VIH VM tr = tr 15pF/30pF 1M/1000 VCC VCC/2 <2.0ns VCC 2.3 to 2.7V 15pF/30pF 1M/500 VCC VCC/2 <2.0ns 2.7 to 5.5V 15pF/50pF 1M/500 VCC VCC/2 <2.5ns
W AVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
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