|
Details, datasheet, quote on part number:74LX1G03
| |
Datasheet text preview:
74LX1G03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
s s s
s
s
s
5V TOLERANT INPUTS H IGH SPEED: tPD = 4.2ns (MAX.) at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS OPERATING VOLTAGE RANGE: VCC(OPR) = 1.65V to 5.5V (1.2V Data Retention) IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE SOT23-5L SOT323-5L T&R 74LX1G03STR 74LX1G03CTR
DESCRIPTION The 74LX1G03 is a low voltage CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. The device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring current sink.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static discharge.
PIN CONNECTION AND IEC LOGIC SYMBOLS
March 2002
1/10
74LX1G03
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No 1 2 4 3 5 SYMBOL 1A 1B 1Y GND V CC NAME AND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L L H H
Z: High Impedance
B L H L H
Y Z Z Z L
AB SOLUTE MAXIMUM RATINGS
Symbol V CC VI VO VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage (VCC = 0V) DC Output Voltage (High or Low State) (note 1) DC Input Diode Current DC Output Diode Current (note 2) DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 50 - 50 ± 50 ± 50 -65 to +150 300 Unit V V V V mA mA mA mA °C °C
ICC or IGND DC VCC or Ground Current per Supply Pin Tstg Storage Temperature TL Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) IO absolute maximum rating must be observed 2) VO V CC
2/10
74LX1G03
RECOMMENDED OPERATING CONDITIONS
Symbol V CC VI VO VO IOL IO L IO L IO L IOL Top dt/dv Supply Voltage (note 1) Input Voltage Output Voltage (VCC = 0V) Output Voltage (High or Low State) High or Low Level Output Current (VCC = 4.5 to 5.5V) High or Low Level Output Current (VCC = 3.0 to 3.6V) High or Low Level Output Current (VCC = 2.7 to 3.0V) High or Low Level Output Current (VCC = 2.3 to 2.7V) High or Low Level Output Current (VCC = 1.65 to 2.3V) Operating Temperqture Input Rise and Fall Time (note 2) Parameter Value 1.65 to 5.5 0 to 5.5 0 to 5.5 0 to VCC + 32 + 24 + 12 +8 +4 -55 to 125 0 to 10 Unit V V V V mA mA mA mA mA °C ns/V
1) Truth Table guaranteed: 1.2V to 3.6V 2) VIN from 0.8V to 2V at VCC = 3.0V
DC SPECIFICATIONS
Test Condition Symbol Parameter VC C (V) 1.65 to 1.95 2.3 to 2.7 3.0 to 5.5 VIL Low Level Input Voltage 1.65 to 1.95 2.3 to 2.7 3.0 to 5.5 VOL Low Level Output Voltage 1.65 to 4.5 1.65 2.3 3.0 4.5 IOZ High Impedance Output Leakage Current Input Leakage Current Power Off Leakage Current Quiescent Supply Current 3.6 1.65 to 5.5 0 1.65 to 5.5 3.6 IO=100 µA IO=4 mA IO=8 mA IO=16 mA IO=24 mA IO=32 mA VI = 0 to 5.5V VI = 0 to 5.5V VI or VO = 5.5V VI = VCC or GND VI or VO = 3.6 to 5.5V -40 to 85 °C Min. 0.75VCC 0.7VCC 0.7VCC 0.25VCC 0.3VCC 0.3VCC 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 ± 10 10 10 ± 10 Max. Value -55 to 125 °C Min. 0.75VCC 0.7VCC 0.7VCC 0.25VCC 0.3VCC 0.3VCC 0.1 0.45 0.3 0.4 0.55 0.55 ± 10 ± 10 10 10 ± 10 µA µA µA µA V V V Max. Unit
VIH
High Level Input Voltage
II Ioff I CC
3/10
74LX1G03
AC ELECTRICAL CHARACTERISTICS
Test Condition Symbol Parameter VCC (V) 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 CL (pF) 30 30 50 50 50 30 30 50 50 50 RL () 1000 500 500 500 500 1000 500 500 500 500 ts = tr (ns) 2.0 2.0 2.5 2.5 2.5 2.0 2.0 2.5 2.5 2.5 -40 to 85 °C Min. 2.4 1.0 1.0 1.5 1 2.4 1.0 1.0 1.5 1 Max. 8.3 5.5 5.5 4.2 3.5 8.3 5.5 5.5 4.2 3.5 Value -55 to 125 °C Min. 2.4 1.0 1.0 1.5 1 2.4 1.0 1.0 1.5 1 Max. 8.3 5.5 5.5 4.2 3.5 8.3 5.5 5.5 4.2 3.5 Unit
tPLZ
Propagation Delay Time
ns
tPZL
Propagation Delay Time
ns
CAPACITIVE CHARACTERISTICS
Test Condition Symbol Parameter VC C (V) VIN = 0 or VCC VIN = 0 or VCC 1.8 2.5 3.3 fIN = 10MHz Value TA = 25 °C Min. Typ. 4 5 21 24 26 10 Max. pF pF pF Unit
CIN CO U T CPD
Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1)
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
4/10
74LX1G03
TEST CIRCUIT
RT = ZOUT of pulse generator (typically 50)
TEST CIRCUIT AND WAVEFORM SYMBOL VALUE
Symbol 1.65 to 1.95V CL RL= R1 VIH VM tr = tr 30pF/50pF 1000 VCC VCC/2 <2.0ns VC C 2.3 to 2.7V 30pF/50pF 500 VCC VCC/2 <2.0ns 2.7 to 5.5V 50pF 500 V CC VCC/2 <2.5ns
WAVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
5/10
|
|
