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Details, datasheet, quote on part number:74V1T32STR
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Datasheet text preview:
74V1T32
SINGLE 2-INPUT OR GATE
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H IGH SPEED: tPD = 4.5ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C C OMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 4.5V to 5.5V IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE SOT23-5L SOT323-5L T&R 74V1T32STR 74V1T32CTR
DESCRIPTION The 74V1T32 is an advanced high-speed CMOS SINGLE 2-INPUT OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.
Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001
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74V1T32
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1 2 4 3 5 SYMBOL 1A 1B 1Y GND V CC NAME AND FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L L H H B L H L H Y L H H H
ABSOLUTE MAXIMUM RATINGS
Symbol V CC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 300 Unit V V V mA mA mA mA °C °C
ICC or IGND DC VCC or Ground Current
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
RECOMMENDED OPERATING CONDITIONS
Symbol V CC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (note 1) (VCC = 5.0 ± 0.5V) Parameter Value 4.5 to 5.5 0 to 5.5 0 to VCC -55 to 125 0 to 20 Unit V V V °C ns/V
1) VIN from 0.8V to 2V
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74V1T32
DC SPECIFICATIONS
Test Condition Symbol Parameter VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 4.5 4.5 4.5 0 to 5.5 5.5 5.5 IO=-50 µA IO=-8 mA IO=50 µA IO=8 mA VI = 5.5V or GND VI = VCC or GND One Input at 3.4V, other input at VCC or GND TA = 25°C Min. 2 0.8 4.4 3.94 0.0 0.1 0.36 ± 0.1 1 1.35 4.5 4.4 3.8 0.1 0.44 ± 1.0 10 1.5 Typ. Max. Value -40 to 85°C Min. 2 0.8 4.4 3.7 0.1 0.55 ± 1.0 20 1.5 µA µA mA V Max. -55 to 125°C Min. 2 0.8 Max. V V V Unit
VIH VIL VOH VOL II ICC
High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current
IC C
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition Symbol Parameter VC C (V) 5.0 (*) 5.0 (*) CL (pF) 15 50 TA = 25°C Min. Typ. 4.6 5.1 Max. 7.0 7.5 Value -40 to 85°C Min. 1.0 1.0 Max. 8.0 8.5 -55 to 125°C Min. 1.0 1.0 Max. 9.0 9.5 ns Unit
tPLH tPHL
Propagation Delay Time
(*) Voltage range is 5.0V ± 0.5V
CA PACITIVE CHARACTERISTICS
Test Condition Symbol Parameter Min. CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 4 14 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
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74V1T32
TEST CIRCUIT
CL = 15/50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50)
W AVEFORM: PROPAGATION DELAY (f=1MHz; 50% duty cycle)
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74V1T32
SOT23-5L MECHANICAL DATA
mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.35 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.95 1.9 0.55 13.7 TYP M AX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 37.4 74.8 21.6 TYP. M AX . 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 mils
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