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Details, datasheet, quote on part number:74V1T66STR
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Datasheet text preview:
74V1T66
SINGLE BILATERAL SWITCH
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H IGH SPEED: tPD = 0.3ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C LOW "ON" RESISTANCE: RON = 6.5 (TYP.) AT VCC = 5V II/O = 1mA SINE WAVE DISTORTION: 0.04% AT VCC = 5V f = 1KHz C OMPATIBLE WITH TTL OUTPUTS ON CONTROL PIN: VIH = 2V (MIN), VIL = 0.8V (MAX) OPERATING VOLTAGE RANGE: VCC(OPR) = 4.5V to 5.5V IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE SOT23-5L SOT323-5L T&R 74V1T66STR 74V1T66CTR
DESCRIPTION The 74V1T66 is an advanced high-speed CMOS SINGLE BILATERAL SWITCH fabricated in silicon gate C2MOS technology. It achieves high speed propagation delay and VERY LOW ON resistances while maintaining true CMOS low power consumption. This bilateral switch handles rail to rail analog and digital signals that may vary across the full power supply range (from GND to VCC ). The C input is provided to control the switch and it's compatible with standard TTL output; the switch is ON (port I/O is connected to Port O/I) PIN CONNECTION AND IEC LOGIC SYMBOLS
when the C input is held high and OFF (high impedance state exists between the two ports) when C is held low. It can be used in many application as Battery Powered System, Test Equipment. It's available in the commercial and extended temperature range in SOT23-5L and SC-70-5L package. All inputs and output are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.
July 2001
1/11
74V1T66
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1 2 4 3 5 SYMBOL I/O O/I C GND V CC NAME AND FUNCTION Independent Input/Output Independent Output/Input Enable Input (Active HIGH) Ground (0V) Positive Supply Voltage
TRUTH TABLE
CONTROL H L
* High Impedance State
SWITCH FUNCTION ON OFF *
AB SOLUTE MAXIMUM RATINGS
Symbol V CC VI VIC VO IIK IIK IOK IO Supply Voltage DC Input Voltage DC Control Input Voltage DC Output Voltage DC Input Diode Current DC Control Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7.0 -0.5 to VCC + 0.5 -0.5 to +7.0 -0.5 to VCC + 0.5 ± 20 - 20 ± 20 ± 50 ± 50 -65 to +150 300 Unit V V V V mA mA mA mA mA °C °C
ICC or IGND DC VCC or Ground Current Tstg Storage Temperature TL Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
RECOMMENDED OPERATING CONDITIONS
Symbol V CC VI VIC VO Top dt/dv Supply Voltage Input Voltage Control Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (note 1) VCC = 5.0V Parameter Value 4.5 to 5.5 0 to VCC 0 to 5.5 0 to VCC -55 to 125 0 to 20 Unit V V V V °C ns/V
1) VIN from 0.8V to 2V on control pin
2/11
74V1T66
DC SPECIFICATIONS
Test Condition Symbol Parameter VCC (V) 5.0(*) 5.0(*) 5.0(*) RON ON Resistance 5.0 IOFF Input/Output Leakage Current (SWITCH OFF) Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) Control Input Leakage Current Quiescent Supply Current
(*)
Value TA = 25°C Min. 2 0.8 Typ. Max. -40 to 85°C Min. 2 0.8 Max. -55 to 125°C Min. 2 0.8 Max. V V V 7.5 10 12 14 V 6.5 8.5 10 12 Unit
VIH VIL RO N
High Level Input Voltage Low Level Input Voltage ON Resistance
VIC = VIH VI/O = VCC to GND II/O 1mA VIC = VIH VI/O = VCC or GND II/O 1mA VOS = VCC to GND VIS = VCC to GND VIC = VIL VOS = VCC to GND VIC = VIH VIC = 5.5V or GND VI = VCC or GND
5.5
±0.1
±1
±5
µA
IIZ
5.5 0 to 5.5 5.5
±0.1 ± 0.1 1
±1 ± 1.0 10
±5 ± 1.0 20
µA µA µA
IIN ICC
(*) Voltage range is 5V ± 0.5V
AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 3ns)
Test Condition Symbol Parameter VC C (V) 5.0
(*)
Value TA = 25°C Min. Typ. 0.3 5.0 2.0 Max. 0.6 7.5 4.0 -40 to 85°C Min. Max. 1.0 9.0 5.0 -55 to 125°C Min. Max. 2.0 10.0 7.0 ns ns ns Unit
tPD tPLZ tPHZ tPZL tPZH
Delay Time Output Disable Time Output Enable Time
tr = tf = 6ns RL = 500 RL = 1 K
5.0(*) 5.0(*)
(*) Voltage range is 5.0V ± 0.5V
3/11
74V1T66
CA PACITIVE CHARACTERISTICS
Test Condition Symbol Parameter Min. CIN CI/O CPD Input Capacitance Output Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 3 10 3 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF pF Unit
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
AN ALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C)
Test Condition Symbol Parameter VC C (V) 5.0(*) 5.0(*) VIN (Vp-p) 4 fIN = 1 KHz RL = 10 K, CL = 50 pF Adjust fIN voltage to obtain 0 dBm at VOS. Increase fIN Frequency until dB meter reads -3dB RL = 50, CL = 10 pF VIN is centered at VCC/2 Adjust fIN Voltage to obtained 0dBm at VIS RL = 600, CL = 50 pF, fIN = 1KHz sine wave RL = 600, CL = 50 pF, fIN = 1KHz square wave tr = tf = 6ns Value Unit Typ. 0.04 180 % MHz
fMAX
Sine Wave Distortion (THD) Frequency Response (Switch ON) Feed through Attenuation (Switch OFF) Crosstalk (Control Input to Signal Output)
5.0(*)
-60
dB
5.0(*)
60
mV
(*) Voltage range is 5.0V ± 0.5V
4/11
74V1T66
SWITCHING CARACTERISTICS TEST CIRCUIT
FEEDTHROUGH ATTENUATION
BANDWIDTH ATTENUATION
MAXIMUM CONTROL FREQUENCY
CROSSTALK (control to output
5/11
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