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Part: 74VHCT132AMTR
Category:
Logic
-> VHC/VHCT->Low Noise HCMOS
Description: Quad 2-INPUT Schmitt NAND Gate
Company: ST Microelectronics, Inc.
Datasheet: Download 74VHCT132AMTR datasheet File size : 110 kB
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Datasheet text preview:
74VHCT132A
QUAD 2-INPUT SCHMITT NAND GATE
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H IGH SPEED: tPD = 6.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C TYPICAL HYSTERESIS : 0.7V at VCC = 4.5V POWER DOWN PROTECTION ON INPUTS & OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 4.5V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 132 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.8V (MAX.)
SOP
TSSOP
ORDER CODES
PACKAGE SOP TSSOP TUBE 74VHCT132AM T&R 74VHCT132AMTR 74VHCT132ATTR
DESCRIPTION The 74VHCT132A is an advanced high-speed CMOS QUAD 2-INPUT SCHMITT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V since all inputs are equipped with TTL threshold.
Pin configuration and function are the same as those of the 74VHCT00A but the 74VHCT132A has hysteresis. This, together with its schmitt trigger function, allows it to be used on line receivers with slow rise/fall input signals. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2001
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74VHCT132A
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND V CC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
TRUTH TABLE
A L L H H B L H L H Y H H H L
ABSOLUTE MAXIMUM RATINGS
Symbol V CC VI VO VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage (see note 1) DC Output Voltage (see note 2) DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 ± 20 ± 25 ± 50 -65 to +150 300 Unit V V V V mA mA mA mA °C °C
ICC or IGND DC VCC or Ground Current Tstg Storage Temperature TL Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 1) VCC = 0V 2) High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol V CC VI VO VO Top Supply Voltage Input Voltage Output Voltage (see note 1) Output Voltage (see note 2) Operating Temperature Parameter Value 4.5 to 5.5 0 to 5.5 0 to 5.5 0 to VCC -55 to 125 Unit V V V V °C
1) VCC = 0V 2) High or Low State
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74VHCT132A
DC SPECIFICATIONS
Test Condition Symbol Parameter VCC (V) 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 4.5 4.5 0 to 5.5 5.5 5.5 0 IO=-50 µA IO=-8 mA IO=50 µA IO=8 mA VI = 5.5V or GND VI = VCC or GND One Input at 3.4V, other input at VCC or GND VOUT = 5.5V TA = 25°C Min. 2.0 2.0 0.6 0.6 1.4 1.5 4.5 0.0 0.1 0.36 ± 0.1 2 1.35 0.5 Typ. Max. Value -40 to 85°C Min. 2.0 2.0 0.6 0.6 1.4 1.5 Max. -55 to 125°C Min. 2.0 2.0 0.6 0.6 1.4 1.5 Max. V V V V 0.1 0.55 ± 1.0 20 1.5 5.0 V µA µA mA µA Unit
Vt+ VtVh VOH VOL II ICC
High Level Threshold Voltage Low Level Threshold Voltage Hysteresis Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current Output Leakage Current
0.4 0.4 4.4 3.94
0.4 0.4 4.4 3.8
0.4 0.4 4.4 3.7
0.1 0.44 ± 1.0 20 1.5 5.0
IC C
IOPD
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition Symbol Parameter VCC (*) CL (pF) (V) 5.0 5.0 15 50 TA = 25°C Min. Typ. 6.5 7.2 Max. 8.8 9.8 Value -40 to 85°C Min. 1.0 1.0 Max. 10.4 11.4 -55 to 125°C Min. 1.0 1.0 Max. 10.4 11.4 ns Unit
tPLH tPHL
Propagation Delay Time
(*) Voltage range is 5.0V ± 0.5V
CA PACITIVE CHARACTERISTICS
Test Condition Symbol Parameter Min. CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) TA = 25°C Typ. 6 18 Max. 10 Value -40 to 85°C Min. Max. 10 -55 to 125°C Min. Max. 10 pF pF Unit
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
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74VHCT132A
DYNAMIC SWITCHING CHARACTERISTICS
Test Condition Symbol Parameter VCC (V) 5.0 TA = 25°C Min. Typ. 0.3 -0.8 CL = 50 pF 2.0 -0.3 V Max. 0.8 Value -40 to 85°C Min. Max. -55 to 125°C Min. Max. Unit
VOLP VOLV VIHD
VILD
Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3)
5.0
5.0
0.6
1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n-1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
TEST CIRCUIT
CL =15/50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50)
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74VHCT132A
W AVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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