Details, datasheet, quote on part number: B60NH02L
PartB60NH02L
Category
DescriptionN-channel 24V - 0.0085 ohm - 60A D2pak Stripfet TM III Power Mosfet
CompanyST Microelectronics, Inc.
DatasheetDownload B60NH02L datasheet
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Features, Applications

TYPICAL RDS(on) V TYPICAL RDS(on) V RDS(ON) * Qg INDUSTRY's BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")

DESCRIPTION

The STB60NH02L utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable fot the most demanding DC-DC converter application where high efficiency to be achieved.

APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES
SALES TYPE STB60NH02LT4 MARKING B60NH02L PACKAGE TO-263 PACKAGING TAPE & REEL

Symbol Vspike(1) VDS VDGR VGS ID IDM(2) Ptot EAS (3) Tstg Tj May 2004 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuous) = 25C Drain Current (continuous) = 100C Drain Current (pulsed) Total Dissipation = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value to 175 Unit W/C mJ C

Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max 62.5 300 C/W C

ELECTRICAL CHARACTERISTICS (TCASE 25 C UNLESS OTHERWISE SPECIFIED) OFF

Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 25 mA, VGS = 0 VDS 20 V VDS 20 V VGS 20V Min. Typ. Max. Unit A nA

Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS 10 V VGS 15 A Min. 1 Typ. 0.0085 0.012 Max. 0.0105 0.020 Unit V

Symbol gfs (4) Ciss Coss Crss RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance Test Conditions VDS 25 A Min. Typ. Max. Unit S pF

= 1 MHz Gate DC Bias = 0 Test Signal Level 20 mV Open Drain

Symbol td(on) tr Qg Qgs Qgd Qoss(5) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Output Charge Test Conditions VDD 30 A VGS = 4.7 (Resistive Load, Figure 3) VDD= 10 V ID= 60 A VGS= 10 V Min. Typ. Max. Unit ns nC

Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD 30 A VGS = 4.7, (Resistive Load, Figure 3) Min. Typ. 27 16 Max. 21.6 Unit ns

Symbol ISD ISDM VSD (4) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD 30 A VGS Test Conditions Min. Typ. Max. Unit nC A

(1) Garanted when external Rg=4.7 and tf < tfmax. (2) Pulse width limited by safe operating area (3) Starting = 25 oC, = 25A, VDD = 15V

(4) Pulsed: Pulse duration = 300 s, duty cycle 1.5 (5) Qoss = Coss* Vin , Coss = Cgd + Cds. See Appendix A


 

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