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Part: BD242BFP
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Complementary Silicon Power Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download BD242BFP datasheet File size : 141 kB
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Datasheet text preview:
®
BD241BFP BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s s s
STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT)
APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS
s
3 1 2
DESCRIPTION The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l P a r am e t e r NPN PNP VC ER V CE O VEBO IC ICM IB P tot Tstg Tj C o l l e c t or - B as e Voltage (R B E = 100 ) C o l l e c t or - E m i tt e r Voltage (I B = 0) E m i t t e r- B a s e Voltage (I C = 0) C o l l e c t or Current C o l l e c t or Peak Current B a s e Current T o t a l Dissipation at T c 25 C S t o ra g e Temperature M a x . Operating Junction Temperature
o
Va l u e B D 24 1 B F P B D 24 2 B F P 90 80 5 3 5 1 24 - 6 5 to 150 150
U ni t
V V V A A A W
o o
C C
For PNP types voltage and current values are negative.
February 2001
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BD241BFP / BD242BFP
THERMAL DATA
R t h j - c a se T h e r m al Resistance Junction-case Max 5.3
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l IC EO I CE S IEBO P a r a m et e r C o l l e c t or Cut-off C u r re n t (I B = 0) C o l l e c t or Cut-off C u r re n t (V B E = 0) E m i t t e r Cut-off Current ( I C = 0) T e s t Conditions V C E = 60 V V C E = 80 V VEB = 5 V I C = 30 mA 80 Min. Typ. M a x. 0.3 0.2 1 Unit mA mA mA V
V CE O ( s u s ) C o l l e c t or - E m i t te r S u s t ai n i n g Voltage ( I B = 0) V C E(s at ) V B E (O N) h FE * C o l l e c t or - E m i t te r S a t u ra t i o n Voltage B a s e -E m i t t e r Voltage D C Current Gain
IC = 3 A IC = 3 A IC = 1 A IC = 3 A
I B = 0.6 A VCE = 4 V VCE = 4 V VCE = 4 V 25 10
1.2 1.8
V V
Pulsed: Pulse duration = 300 µs, duty cycle 2 % For PNP types voltage and current values are negative.
Safe Operating Area
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BD241BFP / BD242BFP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 i nch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7
F1
D
¯
H
F
G1
E F2
123 L2 L4
G
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BD241BFP / BD242BFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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