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Part: BDX53BFP
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Silicon Power Darlington Transistor
Company: ST Microelectronics, Inc.
Datasheet: Download BDX53BFP datasheet File size : 192 kB
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Datasheet text preview:
®
BDX53BFP
SILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications.
3 1 2
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol V CB O V CE O VEBO IC ICM IB P tot Vi s o l Tstg Tj Pa r a m e te r C o l l e c t o r- B a s e Voltage (I E = 0) C o l l e c t o r- E m i tt e r Voltage (I B = 0) E m i t te r- b a s e Voltage (I C = 0) C o l l e c t o r Current C o l l e c t o r Peak Current (repetitive) B a s e Current T o t a l Dissipation at T c 25 o C I n s u l a t io n Withstand Voltage (RMS) from All T h r e e Leads to External Heatsink S t o r a g e Temperature M a x . Operating Junction Temperature Value 80 80 5 8 12 0.2 29 1500 - 6 5 to 150 150 U ni t V V V A A A W V
o o
C C
February 2003
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BDX53BFP
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m a l Resistance Junction-case T h e r m a l Resistance Junction-ambient Max Max 4.3 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol IC BO IC EO IEBO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (I E = 0) C o l l e c t o r Cut-off C u r r e n t (I B = 0) E m i t t e r Cut-off Current ( I C = 0) T e s t Conditions V C B = 80 V V C E = 40 V VEB = 5 V I C = 100 mA 80 Min. Typ. Ma x. 0.2 0.5 2 Unit mA mA mA V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage (I B = 0) V C E(s at ) V B E (s at ) hFE VF C o l l e c t o r- e m i t t e r S a t u r a t io n Voltage B a s e - e m i t te r S a t u r a t io n Voltage D C Current Gain
IC = 3 A IC = 3 A IC = 3 A
I B =12 mA I B =12 mA V CE = 3 V 750 1.8 2.5
2 2.5
V V
P a r a l le l Diode Forward I F = 3 A Voltage IF = 8 A
2.5
V V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
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BDX53BFP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 i nch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7
F1
D
¯
H
F
G1
E F2
123 L2 L4
G
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BDX53BFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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