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Part: BDX53C
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Complementary Silicon Power Darlington Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download BDX53C datasheet File size : 192 kB
Request For quote: Find where to buy BDX53C
Datasheet text preview:
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BDX53B / BDX53C BDX54B / BDX54C
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED SALESTYPES
APPLICATIONS AUDIO AMPLIFIERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
s
DESCRIPTION The BDX53B and BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54B and BDX54C respectively.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Sy mb o l Parameter NPN PNP V CB O V CE O VE B O IC IC M IB P tot Ts t g Tj C o l l e c to r- B a s e Voltage (I E = 0) C o l l e c to r- E m it t e r Voltage (I B = 0) E m i t te r- b a s e Voltage (I C = 0) C o l l e c to r Current C o l l e c to r Peak Current (repetitive) B a s e Current T o t a l Dissipation at T c 25 C
o
Value BDX53B BDX54B 80 80 5 8 12 0.2 60 - 6 5 to 150 150 BDX53C BDX54C 100 100
U n it
V V V A A A W
o o
S t o r a g e Temperature M a x . Operating Junction Temperature
C C
For PNP types voltage and current values are negative.
September 1999
1/6
BDX53B - BDX53C - BDX54B - BDX54C
THERMAL DATA
R t h j - c a se R t hj -amb T h e r m a l Resistance Junction-case T h e r m a l Resistance Junction-ambient Max Max 2.08 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Sy m b o l I CB O I CE O IE B O Pa r a m e t e r C o l l e c to r Cut-off C u r r e n t (I E = 0) C o l l e c to r Cut-off C u r r e n t (I B = 0) E m i t te r Cut-off Current ( I C = 0) T e s t Conditions f o r BDX53B/54B f o r BDX53C/54C f o r BDX53B/54B f o r BDX53C/54C VEB = 5 V I C = 100 mA for BDX53B/54B for BDX53C/54C I B =12 mA I B =12 mA VCE = 3 V 750 1.8 2.5 2.5 V V 80 100 2 2.5 V C B = 80 V V C B = 100V V C E = 40 V V C E = 50V Min. Typ. Max. 0.2 0.2 0.5 0.5 2 U n it mA mA mA mA mA V V V V
V CE O ( s u s ) C o l l e c to r- E m it t e r S u s t a i n in g Voltage (I B = 0) VC E ( s a t ) V B E (s at ) hFE V F C o l l e c to r- e m i t te r S a t u r a t io n Voltage B a s e - e m i tt e r S a t u r a t io n Voltage D C Current Gain
IC = 3 A IC = 3 A IC = 3 A
P a r a l le l - d io d e Forward I F = 3 A IF = 8 A Voltage
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.
Safe Operating Area
Derating Curve
2/6
BDX53B - BDX53C - BDX54B - BDX54C
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
Base Emitter Saturation Voltage (NPN type)
Base Emitter Saturation Voltage (PNP type)
3/6
BDX53B - BDX53C - BDX54B - BDX54C
Base Emitter On Voltage (NPN type) Base Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
Switching Time Resistive Load (NPN type)
Switching Time resistive Load (PNP type)
4/6
BDX53B - BDX53C - BDX54B - BDX54C
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. M AX. 4.60 1.32 2.72 M IN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. M AX. 0.181 0.051 0.107
P011C
5/6
Others parts begin by bd
BD-1 BD-2 BD-3 BD-4 BD-5 BD-6 BD-7 BD-8 BD-9 BD-10 BD-11 BD-12 BD-13
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