Details, datasheet, quote on part number: BTA08-400B
CategoryDiscrete => Thyristors => Triacs
CompanyST Microelectronics, Inc.
DatasheetDownload BTA08-400B datasheet
Cross ref.Similar parts: BT137X-600G
Find where to buy


Features, Applications


DESCRIPTION The BTA/BTB08 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values)

Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial ) I2t value Critical rate of rise of on-state current Gate supply = 500mA diG/dt = 1A/s Parameter BTA BTB 10 ms Repetitive 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 4.5 mm from case Parameter 400 VDRM VRRM Repetitive peak off-state voltage C 400 BTA / BTB08-... B/C C A2s A/s A Value 8 Unit A

Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360 conduction angle F= 50 Hz) BTA BTB Parameter Value C/W Unit C/W

Symbol Test Conditions Quadrant B IGT VD=12V (DC) =33 Tj=25C I-II-III IV VGT VGD tgt IL VD=12V (DC) Tj=110C Tj=25C I-II-III-IV I-III-IV IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 11A tp= 380s VDRM VRRM Rated Tj=25C Tj=110C MAX MIN 250 MAX MIN TYP V/s V mA Suffix s mA Unit

* For either polarity of electrode A2 voltage with reference to electrode A1.
Package IT(RMS) A BTA (Insulated) 8 VDRM / VRRM V BTB (Uninsulated) Sensitivity Specification

Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation)

Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).

Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB).


Related products with the same datasheet
Some Part number from the same manufacture ST Microelectronics, Inc.
BTA08-400BW -
BTA08-400C 8A Triacs
BTA08-600A Snubberless Triacs
BTA08-600B 8A Triacs
BTA08-600S Snubberless Triacs
BTA08-600SW 8A Triacs
BTA08-700A Snubberless Triacs
BTA08-700B -
BTA08-700C 8A Triacs
BTA08-700S Snubberless Triacs
BTA08-800B 8A Triacs
BTA08A-200A Sensitive Gate Triacs
BTA08AW Snubberless Triacs
BTA10 10A Triacs
BTA10-400B -
BTA10-400C 10A Triacs
BTA10-700B -
BTA10-700C 10A Triacs
BTA10-GP Triacs
BTA108-600BW 8A Triacs
Same catergory

1N5253B : 25V, 0.5W Zener Diode. Power Dissipation Derate above 75C Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16" from case for 10 seconds) Surge Power** *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C. NOTES: 1) These ratings are based.

BAT54SW : Dual Series Schottky Barrier Diode. These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage 0.35 Volts.

BSS192 : P-channel Sipmos Small-signal Transistor. Maximum Ratings Parameter Symbol Values Unit Gate source voltage Continuous drain current Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 IEC climatic category, DIN IEC 68-1 Electrical Characteristics, = 25C, unless otherwise specified Parameter Symbol min. Values typ. max.

BU2520DF : BU2520DF; Silicon Diffused Power Transistor;; Package: SOT199 (3-lead TO-247F).

BUK545-60H : Powermos Transistor Logic Level Fet: 60v, 21a. N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage.

FQA12N60 : 600V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

MBR2050CT : 20 Ampere Schottky Barrier Rectifiers. Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. 2035CT Maximum Repetitive Reverse Voltage Average Rectified.

SKiiP39AHB16V1 : . Absolute Maximum Ratings Symbol Conditions IGBT - Chopper Fig. 4 Reverse bias safe operating area .

SKN501 : Rectifier Diodes. Symbol Conditions IFAV IFSM i2t sin. 180; DSC; (Tcase Tvj = 25 C; 10 ms Tvj max. 10 ms Tvj = 25 C; 10 ms Tvj max. 10 ms Tvj =140 C; FM A diF s typ. Tvj = 25 C; VR = VRRM Tvj max VR = VRRM Tvj = 25 C; (IF max. Tvj max. Tvj max. SKN A (105 C) 100 A Reverse voltages 3000 V Capsule type metal-ceramic packages with precious metal pressure contacts.

IXGH30N60C2D1 : High Frequency Range (>40 KHz) IGBT/FRED Types Very high frequency IGBT 􀁺 Square RBSOA 􀁺 High current handling capability 􀁺 MOS Gate turn-on.

BAS16T/R13 : 0.25 A, 100 V, SILICON, SIGNAL DIODE. s: Package: GREEN, PLASTIC PACKAGE-3 ; Number of Diodes: 1 ; IF: 250 mA ; RoHS Compliant: RoHS.

F426BL224J400C : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 400 V, 0.22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.2200 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 400 volts ; Mounting Style: Through Hole.

PM150CL1A060 : 150 A, 600 V, N-CHANNEL IGBT. s: Polarity: N-Channel ; Package Type: MODULE-25 ; Number of units in IC: 6.

SD403BDTA : UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-92. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 15 volts ; PD: 300 milliwatts ; Number of units in IC: 1.

VR3700001585FR500 : RESISTOR, METAL GLAZE/THICK FILM, 0.5 W, 1 %, 200 ppm, 15800000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Resistance Range: 1.58E7 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 200 ±ppm/°C ; Power.

1F10-AP : 0.5 A, 1000 V, SILICON, SIGNAL DIODE. s: Package: PLASTIC, R-1, 2 PIN ; Number of Diodes: 1 ; IF: 500 mA ; RoHS Compliant: RoHS.

3N140 : 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72. s: Polarity: N-Channel ; MOSFET Operating Mode: Depletion ; V(BR)DSS: 20 volts ; Package Type: TO-72, 4 PIN ; Number of units in IC: 1.

45LR120 : 150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC. s: Number of Diodes: 1 ; VRRM: 1200 volts ; IF: 150000 mA.

0-C     D-L     M-R     S-Z