|
Details, datasheet, quote on part number:DB-900-60W
| |
| Part: | DB-900-60W |
| Category: | RF & Microwaves => Transistors => FETs => LDMOS => Demo Boards->Power |
| Description: | 60W / 26V / 869-894 MHZ pa Using 1X PD57070S |
| Company: | ST Microelectronics, Inc. |
| Datasheet: | Download DB-900-60W datasheet File size : 649 kB |
| Request For quote: | Find where to buy DB-900-60W
|
| |
Datasheet text preview:
DB-900-60W
60W / 26V / 869-894 MHz PA using 1x PD57070S The LdmosST FAMILY
PRELIMINARY DATA
N-CHAN NEL ENHANCEMENT-MODE LATERAL MOSFETs · EXC ELLENT THERMAL STABILITY · COMMON SOURCE CONFIGURATION · POUT = 60 W min. with 13 dB gain over 869 - 894 MHz · 10:1 LOAD VSWR CAPABILITY · BeO FREE AMPLIFIER.
DESCRIPTION The DB-900-60W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 and IS-95 base station applications. The DB-900-60W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc.
ORDER CODE DB-900-60W
MECHANICAL SPECIFICATION L=60 mm W=30 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol V DD ID PDISS TCASE Pamb Supply voltage Drain Current Power Dissipation Operating Case Temperature Max. Ambient Temperature Parameter Value 32 8 95 -20 to +85 +55 Unit V A W
o o
C C
November, 20 2002
1/4
DB-900-60W
ELECTRICAL SPECIFICATION (Tamb = +25 oC, Vdd = 26 V, Idq = 250 mA)
Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 60 W Over frequency range: 869 - 894 MHz Over frequency range and @ POUT = 60 W POUT from 0.1 W to 60 W P1dB Input return Loss POUT from 0.1 W to 60 W POUT = 60 W Load Mismatch all phases @ POUT = 60 W 10:1 VSWR all phases and POUT from 0.1 to 60 W POUT = 60 WPEP 10:1 -76 -25 dBc dBc 45 52 -15 -10 -30 Test Conditions Min. 869 13 60 14 65 +/- 0.5 1 Typ. Max. 894 Unit MHz dB W dB dB % dB dBc
TYPICAL PERFORMANCE Power Gain vs. Frequency
18
P1dB vs. Frequency
80
17
70
16 P in = 28 dBm
P1dB (W)
P in = 34 dBm
Gp (dB)
15
60
14
50
13 Vc c = 26 V Idq = 250 mA 12 86 5 8 70 87 5 880 88 5 8 90 89 5 900
Vc c = 26 V Idq = 250 mA 40 865 8 70 875 8 80 885 8 90 895 90 0
f (MHz)
f (MHz)
Drain Efficiency at P1dB vs. Frequency
70
60
50 Nd (%) 40 30 Vc c = 26 V Idq = 250 mA 20 865 870 875 880 885 890 895 900 f (MHz)
2/4
DB-900-60W
TEST FIXTURE COMPONENT LAYOUT
TEST CIRCUIT PHOTOMASTER
TEST CIRCUIT COMPONENT PART LIST
COMPONENT T1 C1 C2 C 3 ,C 4 C5, C7, C13 C6, C8 C10 C11 C12, C9 CV1 P1 R1 R2 D1 BO ARD SU BSTR ATE B A C K S ID E C E R A M I C C H IP C A P A C I T O R S D E S C R IP T I O N P D 5 7 0 7 0 S T R A N S IS T O R 1 µ F / 3 5 V E L E C T R O L Y T IC C A P A C I T O R 1 0 0 n F - 6 3 V C E R A M IC C H IP C A P A C IT O R 1 0 0 p F - 5 0 0 V C E R A M IC C H IP C A P A C I T O R 1 0 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R 4 7 p F - 5 0 0 V C E R A M IC C H IP C A P A C IT O R 4 .7 p F - 5 0 0 V C E R A M I C C H I P C A P A C IT O R 3 .3 p F - 5 0 0 V C E R A M I C C H I P C A P A C IT O R 6 .8 p F - 5 0 0 V C E R A M I C C H I P C A P A C IT O R A D J U S T A B L E C A P A C IT O R 0 . 6 - 4 .5 p F / 5 0 0 V 1 0 K O h m s M U L T IT U R N P O T E N T IO M E T E R 4 .7 K O h m s 1 /4 W 1 2 0 6 S M D C H I P R E S I S T O R 1 0 K O h m s 1 / 4 W 1 2 0 6 S M D C H IP R E S IS T O R Z E N E R D IO D E 5 V - 5 0 0 m W S O D 8 0 M E T C L A D M X 3 - 3 0 - C 1 / 1 0 C T H K 0 .7 6 2 m m C u 3 5 µ T E F LO N -G L A S S E r = 2.5 5 C O P P E R F L A N G E 2 m m T H IC K N E S S A T C 1 0 0 B o r E Q U IV A L E N T
3/4
DB-900-60W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http ://www.st.com
4/4
|
|
