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Details, datasheet, quote on part number:ESDA6V1S3
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Datasheet text preview:
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ESDA6V1S3 ESDA6V2S6
TRANSIL ARRAY FOR ESD PROTECTION
Application Specific Discretes A.S.D.TM
APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : - COMPUTERS - PRINTERS - COMMUNICATION SYSTEMS - GSM HANDSETS AND ACCESSORIES - OTHER TELEPHONE SETS
FEATURES
n n n
18 UNIDIRECTIONAL TRANSIL FUNCTIONS LOW LEAKAGE CURRENT: IR max. < 2 µA 200 W PEAK PULSE POWER (8/20 µs)
SO-20 ESDA6V1S3
SSOP20 ESDA6V2S6
DESCRITION The ESDA6xxSx is a monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients.
FUNCTIONAL DIAGRAM
BENEFITS High ESD protection level : up to 25 kV High integration Suitable for high density boards
COMPLIES WITH THE FOLLOWING STANDARDS : IEC 1000-4-2 : level 4 MIL STD 883C-Method 3015-6 : class3 (human body model)
October 2003 - Ed: 3A
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ESDA6V1S3 / ESDA6V2S6
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol VPP PPP Tstg Tj TL Parameter Electrostatic discharge MIL STD 883C - Method 3015-6 Peak pulse power (8/20µs) Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s Value 25 200 - 55 to + 150 150 260 Unit kV W °C °C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current Peak pulse current Voltage temperature coefficient Capacitance Dynamic resistance Forward voltage drop
T
C Rd VF
Types min. note1 V
VBR
@ max.
IR
IRM max. note1
@
VRM
Rd typ. note 2
T max. note 3 10 /°C
-4
C typ. 0V bias pF 120 100
VF @ max.
IF
V 7.2 7.2
mA 1 1
µA 2 2
V 5.25 5.25
0.5 0.5
V 1.25 1.25
mA 200 200
ESDA6V1S3 ESDA6V2S6
6.1 6.2
6 6
Note 1 : Between any I/O pin and Ground Note 2 : Square pulse, IPP = 25A for ESDA6V1S3 and IPP = 15A for ESDA6V2S6 , tp = 2.5µs Note 3 : VBR = T * [Tamb-25] * VBR(25°C)
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ESDA6V1S3 / ESDA6V2S6
CALCULATION OF THE CLAMPING VOLTAGE USE OF THE DYNAMIC RESISTANCE The ESDA family has been designed to clamp fast spikes like ESD. Generally the PCB designers need to calculate easily the clamping voltage VCL. This is why we give the dynamic resistance in addition to the classical parameters. The voltage across the protection cell can be calculated with the following formula: VCL = VBR + Rd IPP Where Ipp is the peak current through the ESDA cell. DYNAMIC RESISTANCE MEASUREMENT The short duration of the ESD has led us to prefer a more adapted test wave, as below defined, to the classical 8/20µs and 10/1000µs surges.
I Ipp
As the value of the dynamic resistance remains stable for a surge duration lower than 20µs, the 2.5µs rectangular surge is well adapted. In addition both rise and fall times are optimized to avoid any parasitic phenomenon during the measurement of Rd.
2µs tp = 2.5µs
t
2.5µs duration measurement wave.
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ESDA6V1S3 / ESDA6V2S6
Fig. 1 : Peak power dissipation versus initial junction temperature.
Ppp[Tj initial]/Pp[Tj initial=25°C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
2000 1000
Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25 °C).
Ppp(W)
100
Tj initial(°C) 0 25 50 75 100 125 150
10 1
tp(µs) 10 100
Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs.
Ipp(A) 50.0
tp=2.5µs
Fig. 4 : Capacitance versus reverse applied voltage (typical values).
C(pF) 100
F=1MHz Vosc=30mV
10.0
50
1.0
20
VCL(V)
VR(V) 10 1 2 5 10
0.1
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32
Fig. 5 : Relative variation of leakage current versus junction temperature (typical values).
IR[Tj] / IR[Tj=25°C] 200 100
Fig. 6 : Peak forward voltage drop versus peak forward current (typical values).
IFM(A) 5.00
Tj=25°C
1.00
10
0.10 VFM(V)
100 125
Tj(°C) 1 25 50 75
0.01 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
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ESDA6V1S3 / ESDA6V2S6
APPLICATION EXAMPLE : 1 - Protection of logic-level signals. (ex : centronics junction) 2 - Protection of symmetrical signals. Note : Capacitance value between any I/O pin and Ground is divided by 2.
0 to 5 V
A1 +/- 2.5 V
D1
D2
0 to 5 V
A2
+/- 2. 5 V
Dn
0 to 5 V
A16
+/- 2.5 V
technology, Implementing its ASDTM STMicroelectronics has developed a monolithic TRANSIL diode array, which is a reliable protection against electrostatic overloads for computer I/O ports, modems, GSM handsets and accessories or other similar systems with data outputs. The ESDAxxSx integrates 18 TRANSIL diodes in a compact package that can be easily mounted close to the circuitry to be protected, eliminating the assembly costs associated with the
use of discrete diodes, and also increasing system reliability. Each TRANSIL has a breakdown voltage between 6.2V (minimum) and 7.2V (maximum). When the input voltage is lower than the breakdown voltage, the diodes present a high impedance to ground. For short overvoltage pulses, the fast-acting diodes provide an almost instantaneous response, clamping the voltage to a safe level.
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