Datasheet text preview:
L6569 L6569A
HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR
s s s s s
HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA - SOURCE CURRENT = 170mA VER Y LOW START UP CURRENT: 150µA UNDER VOLTAGE LOCKOUT WITH HYSTERESIS PROGRAMMABLE OSCILLATOR FREQUENCY DEAD TIME 1.25µs dV/dt IMMUNITY UP TO ±50V/ns ESD PROTECTION
Minidip SO8
s s s s s s
ORDERING NUMBERS: L6569 L6569D L6569A L6569AD
be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal. The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25µs] to avoid crossconduction of the power devices. Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.
DESCRIPTION The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can BLOCK DIAGRAM
H.V. CVS 1 Source CHARGE PUMP BIAS REGULATOR VS RF RF CF
COMP
VS
RHV
BOOT 8
LEVEL SHIFTER
7
HVG
CBOOT
2
BUFFER
HIGH SIDE DRIVER 6 OUT LOAD
CF
3
COMP
VS LOGIC LOW SIDE DRIVER 5
D94IN058D
LVG
GND
4
June 2000
This is preliminary information on a new product now in development. Details are subject to change without notice.
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L6569 L6569A
ABSOLUTE MAXIMUM RATINGS
Symbol IS (*) VCF VLVG VOUT VHVG VBOOT VBOOT/OUT dVBOOT/dt dVOUT/dt Tstg Tj Tamb Supply Current Oscillator Resistor Voltage Low Side Switch Gate Output High Side Switch Source Output High Side Switch Gate Output Floating Supply Voltage Floating Supply vs OUT Voltage VBOOT Slew Rate (Repetitive) VOUT Slew Rate (Repetitive) Storage Temperature Junction Temperature Ambient Temperature (Operative) Parameter Value 25 18 14.6 -1 to VBOOT - 18 -1 to VBOOT 618 18 ± 50 ± 50 -40 to 150 -40 to 150 -40 to 125 Unit mA V V V V V V V/ns V/ns °C °C °C
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source. Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
Symbol Rth j-amb Parameter Thermal Resistance Junction-Ambient Max Minidip 100 SO8 150 Unit °C/W
RECOMMENDED OPERATING CONDITIONS
Symbol VS VBOOT VOUT fout Supply Voltage Floating Supply Voltage High Side Switch Source Output Oscillation Frequency Parameter Min. 10 -1 Max. V CL 500 VBOOT -VCL 200 Unit V V V kHz
PIN CONNECTION
VS RF CF GND
1 2 3 4
D94IN059
8 7 6 5
BOOT HVG OUT LVG
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L656 9 L6569A
PIN FUNCTION
N° 1 2 Pin VS RF Description Supply input voltage with internal clamp [typ. 15.6V] Oscillator timing resistor pin. A buffer set alternatively to VS and GND can provide current to the external resistor RF connected between pin 2 and 3. Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569 to drive a full H-bridge) Oscillator timing capacitor pin. A capacitor connected between this pin and GND fixes (together with RF) the oscillating frequency Alternatively an external logic signal can be applied to the pin to drive the IC. Ground Low side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. Upper driver floating reference High side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. Bootstrap voltage supply. It is the upper driver floating supply. The bootstrap capacitor connected between this pin and pin 6 can be fed by an internal structure named "bootstrap driver" (a patented structure). This structure can replace the external bootstrap diode.
3
CF
4 5 6 7 8
GND LVG OUT HVG BOOT
ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.)
Symbol VSUVP VSUVN VSUVH VCL I SU Iq IBOOTLK IOUTLK IHVG SO IHVG SI ILVG SO ILVG SI 5 8 6 7 Pin 1 Parameter VS Turn On Threshold VS Turn Off Threshold VS Hysteresis VS Clamping Voltage Start Up Current Quiescent Current Leakage Current BOOT pin vs GND Leakage Current OUT pin vs GND High Side Driver Source Current High Side Driver Sink Current Low Side Driver Source Current Low Side Driver Sink Current IS = 5mA VS VSUVP VBOOT = 580V VOUT = 562V VHVG = 6V VHVG = 6V VLVG = 6V VLVG = 6V 110 190 110 190 175 275 175 275 Test Condition Min. 8.3 7.3 0.7 14.6 Typ. 9 8 1 15.6 150 500 Max. 9.7 8.7 1.3 16.6 250 700 5 5 Unit V V V V µA µA µA µA mA mA mA mA
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