Datasheet text preview:
L6571A L6571B
HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR
s s s s
HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURR ENT = 270mA - SOURCE CURRENT = 170mA VER Y LOW START U P CURRENT: 150µA UNDER VOLTAGE LOC KOUT WITH HYSTERESIS PROGRAMMABLE OSCILLATOR FREQUEN CY DEAD TIME 1.25µs (L6571A) or 0.72µs (L6571B) dV/dt IMMUNITY UP TO ±50V/ns ESD PROTECTION
s s s s s s
Minidip
SO8
ORDERING NUMBERS: L6571A L6571AD L6571B L6571BD
tor. The internal circuitry of the device allows it to be driven also by external logic signal. The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time to avoid cross-conduction of the power devices. Two version are available: L6571A and L6571B. They differ in the internal dead time: 1.25µs and 0.72µs (typ.)
DESCRIPTION The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capaciBLOCK DIAGRA M
H.V. CVS VS 1 RHV BOOT 8
BIAS REGULATOR
LEVEL SHIFTER
7 HIGH SIDE DRIVER
HVG
CBOOT
VS RF RF CF
COMP
2
BUFFER 6 OUT LOAD
CF
3
COMP
VS LOGIC LOW SIDE DRIVER 5
D96IN433
LVG
GND
4
September 2000
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L6571A L6571B
ABSOLUTE MAXIMUM RATINGS
Symbol IS (*) VCF VLVG VOUT VHVG VBOOT VBOOT/OUT dVBOOT/dt dVOUT/dt Tstg Tj Tamb Supply Current Oscillator Resistor Voltage Low Side Switch Gate Output High Side Switch Source Output High Side Switch Gate Output Floating Supply Voltage Floating Supply vs OUT Voltage VBOOT Slew Rate (Repetitive) VOUT Slew Rate (Repetitive) Storage Temperature Junction Temperature Ambient Temperature (Operative) Parameter Value 25 18 14.6 -1 to VBOOT - 18 -1 to VBOOT 618 18 ± 50 ± 50 -40 to 150 -40 to 150 -40 to 125 Unit mA V V V V V V V/ns V/ns °C °C °C
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source. Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
Symbol Rth j-amb Parameter Thermal Resistance Junction-Ambient Max Minidip 100 SO8 150 Unit °C/W
RECOMMENDED OPERATING CONDITIONS
Symbol VS VBOOT VOUT fout Supply Voltage Floating Supply Voltage High Side Switch Source Output Oscillation Frequency Parameter Min. 10 -1 Max. VCL 500 VBOOT -VCL 200 Unit V V V kHz
PIN CONNECTION
VS RF CF GND
1 2 3 4
D94IN059
8 7 6 5
BOOT HVG OUT LVG
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L6571A L6571B
PIN FUNCTION
N° 1 2 Pin VS RF Description Supply input voltage with internal clamp [typ. 15.6V] Oscillator timing resistor pin. A buffer set alternatively to VS and GND can provide current to the external resistor RF connected between pin 2 and 3. Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to drive a full H-bridge) Oscillator timing capacitor pin. A capacitor connected between this pin and GND fixes (together with RF) the oscillating frequency Alternatively an external logic signal can be applied to the pin to drive the IC. Ground Low side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. Upper driver floating reference High side driver output. The output stage can deliver 170mA source and 270mA sink [typ.values]. Bootstrap voltage supply. It is the upper driver floating supply.
3
CF
4 5 6 7 8
GND LVG OUT HVG BOOT
ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.)
Symbol VSUVP VSUVN VSUVH VCL I SU Iq IBOOTLK IOUTLK IHVG SO IH V G S I ILVG SO ILVG SI VRFON VRF OFF VC F U VCFL td 3 2 5 8 6 7 Pin 1 Parameter VS Turn On Threshold VS Turn Off Threshold VS Hysteresis VS Clamping Voltage Start Up Current Quiescent Current Leakage Current BOOT pin vs GND Leakage Current OUT pin vs GND High Side Driver Source Current High Side Driver Sink Current Low Side Driver Source Current Low Side Driver Sink Current RF High Level Output Voltage RF Low Level Output Voltage CF Upper Threshold CF Lower Threshold Internal Dead Time L6571A L6571B IS = 5mA VS VSUVP VBOOT = 580V VOUT = 562V VHVG = 6V VHVG = 6V VLVG = 6V VLVG = 6V IRF = 1mA IRF = -1mA 110 190 110 190 VS -0.05 50 7.7 3.80 0.85 0.50 8 4 1.25 0.72 175 275 175 275 VS -0.2 200 8.2 4.3 1.65 0.94 Test Condition Min. 8.3 7.3 0.7 14.6 Typ. 9 8 1 15.6 150 500 Max. 9.7 8.7 1.3 16.6 250 700 5 5 Unit V V V V µA µA µA µA mA mA mA mA V mV V V µs µs
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