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Part: LF347IN
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
Description: Wide Bandwidth Quad J-FET Operational Amplifiers
Company: ST Microelectronics, Inc.
Datasheet: Download LF347IN datasheet File size : 82 kB
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Datasheet text preview:
LF 1 47 - L F 24 7 LF 34 7
WIDE BANDWIDTH QUAD J-FET OPERATIONAL AMPLIFIERS
. . . . . . . .
LOW POWER CONSUMPTION WIDE COMMON-MODE (UP TO VCC+) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE JFET INPUT STAGE INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE : 16V/µs (typ)
N DIP14 (Plastic Package)
D SO14 (Plastic Micropackage)
DE SC RI P T I O N These circuits are high speed JFET input quad operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. P I N CO NNE CTI O NS (t o p v ie w)
ORDER CODES
Part Num ber LF347 LF247 LF147 Example : LF347IN Temperature Range 0 C, +70 C 40 C, +105 C -55 C, +125 C
o o o o o o
Package N · · · D · · ·
Output 1 1 Inverting Input 1 2 Non-inverting Input 1 3 VCC + 4 Non-in verting Input 2 5 Inverting Input 2 6 Output 2 7 + + + +
14 Output 4 13 Inverting Input 4 12 Non-i nverting Input 4 11 VCC 10 Non-i nverting Input 3 9 8 Inverting Input 3 Output 3
October 1997
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LF14 7 - LF247 - LF34 7
S CHE MATI C DI AG RAM (e a c h a mp lif ie r)
VCC
No n -inve rting in p u t
Inve rting inp u t
100 100
30k
200
O u tp u t
8 .2k
1.3k
VCC
35 k
1 .3 k
35 k
100
ABSOLUTE MAXIMUM RATINGS
Symbol VC C Vi Vid P t ot Toper Supply Voltage - (note 1) Input Voltage - (note 3) Differential Input Voltage - (note 2) Power Dissipation Output Short-circuit Duration - (note 4) Operating Free Air Temperature Range LF347 LF247 LF147 Parameter Value ±18 ±15 ±30 680 Infinite 0 to 70 40 to 105 55 to 125 65 to 150
o
Unit V V V mW C
Tstg
N otes :
Storage Tem perature Range
o
C
1. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between VCC+ and VCC. 2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. 4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded.
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LF1 47 - LF247 - LF347
ELECTRICAL CHARACTERISTICS VC C = ±15V, Tamb = 25oC (unless otherwise specified)
Symbo l Vio Parameter Input Offset Voltage (RS = 10k) o Tamb = 25 C Tmin. Ta mb Tmax. Input Offset Voltage D rift Input Offset Current * Tamb = 25oC Tmin. Ta mb Tmax. Input Bias Current * Tamb = 25oC Tmin. Ta mb Tmax. Large Signal Voltage Gain (R L = 2k, VO = ±10V) o Tamb = 25 C Tmin. Ta mb Tmax. Supply Voltage Rejection Ratio (RS = 10k) Tamb = 25oC Tmin. Ta mb Tmax. Supply Current, per Amp, no Load o Tamb = 25 C Tmin. Ta mb Tmax. Input Common Mode Voltage Range Common Mode Rejection Ratio (RS = 10k) o Tamb = 25 C Tmin. Ta mb Tmax. Output Short-circuit Current o Tamb = 25 C Tmin. Ta mb Tmax. Output Voltage Swing Tamb = 25oC Tmin. Ta mb Tmax. SR tr KOV GBP Ri THD en m VO1/VO2 RL RL RL RL = = = = 2k 10k 2k 10k ±11 50 25 80 80 Min. Typ. 3 10 5 100 4 200 20 Max. 10 13 µV/ C pA nA pA nA V/mV 200 dB 86 mA 1.4 +15 -12 86 mA 10 10 10 12 10 12 12 40 60 60 V 12 13.5 V/µs µs 0.1 % 10 MHz 2.5 4 10
12 o
Unit mV
DVio Iio
Iib
20
Avd
SVR
ICC
2.7 2.7 V dB
Vicm CMR
70 70
Ios ±VOPP
Slew R ate (Vi = 10V, RL = 2k, CL = 100pF, Tamb = 25oC, unity gain) Rise Time o (Vi = 20mV, RL = 2k, C L = 100pF, Tamb = 25 C, unity gain) Overshoot (Vi = 20mV, RL = 2k, C L = 100pF, Tamb = 25oC, unity gain) Gain Bandwidth Product o (f = 100kHz,T amb = 25 C, Vin = 10mV, RL = 2k, C L = 100pF) Input Resistance Total Harmonic Distortion (f = 1kHz, AV = 20dB, R L = 2k, o C L = 100pF, Tamb = 25 C, VO = 2VPP) Equivalent Input N oise Voltage (f = 1kHz, R s = 100) Phase M argin Channel Separation (Av = 100)
16
%
0.01 15 45 120 nV H z Degrees dB
* The input bias currents are junction leakage currents which approximately double for every 10oC increase in the junction temperature.
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