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Part: LF351B
Category: Analog & Mixed-Signal Processing -> Amplifiers -> Operational Amplifiers -> General Purpose
Description: Wide Bandwidth Single J-FET Operational Amplifiers
Company: ST Microelectronics, Inc.
Datasheet: Download LF351B datasheet File size : 82 kB
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Datasheet text preview:
LF151 LF251 - LF351
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER
s INTERNALLY ADJUSTABLE INPUT OFFSET
VOLTAGE
s LOW POWER CONSUMPTION s WIDE COMMON-MODE (UP TO VCC+) AND
DIFFERENTIAL VOLTAGE RANGE
s LOW INPUT BIAS AND OFFSET CURRENT s OUTPUT SHORT-CIRCUIT PROTECTION s HIGH INPUT IMPEDANCE JFET INPUT
STAGE
N DIP8 (Plastic Package)
s INTERNAL FREQUENCY COMPENSATION s LATCH UP FREE OPERATION s HIGH SLEW RATE : 16V/µs (typ)
D SO8 (Plastic Micropackage)
DESCRIPTION These circuits are high speed JFET input singleoperational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view)
ORDER CODE
Package Part Number LF351 LF251 LF151 Temperature Range N 0°C, +70°C -40°C, +105°C -55°C, +125°C · · · D · · ·
N = Dual in Line Package (DIP) D = Small Outline Package (SO) - also available in Tape & Reel (DT)
1 2 3 4
8 7 6 5
12345678-
Offset null 1 Inverting input Non-inverting input VCCOffset null 2 Output VCC+ N.C.
March 2001
1/9
LF151 - LF251 - LF351
SCHEMATIC DIAGRAM
INPUT OFFSET VOLTAGE NULL CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Symbol VCC Vi Vid Ptot Toper Tstg
1. 2. 3. 4.
Parameter Supply voltage - note Input Voltage - note Power Dissipation Output Short-circuit Duration - note Storage Temperature Range
4) 2) 1)
LF151
LF251
LF351
Unit V V V mW
±18 ±15 ±30 680 Infinite -55 to +125 -40 to +105 -65 to +150 0 to +70
Differential Input Voltage - note 3)
Operating Free-air Temperature Range
°C °C
All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between VCC + and VCC -. T he magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. T he output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded
2/9
LF151 - LF251 - LF351
ELECTRICAL CHARACTERISTICS VCC = ±15V, Tamb = +25°C (unless otherwise specified)
Symbol Vio DVio Iio Parameter Input Offset Voltage (Rs = 10k) Tamb = +25°C Tmin Tamb Tmax Input Offset Voltage Drift Input Offset Current- note 1) Tamb = +25°C Tmin Tamb Tmax Input Bias Current -note 1 Tamb = +25°C Tmin Tamb Tmax Large Signal Voltage Gain (RL = 2k, Vo = ±10V) Tamb = +25°C Tmin Tamb Tmax Supply Voltage Rejection Ratio (RS = 10k) Tamb = +25°C Tmin Tamb Tmax Supply Current, no load Tamb = +25°C Tmin Tamb Tmax Input Common Mode Voltage Range Common Mode Rejection Ratio (RS = 10k) Tamb = +25°C Tmin Tamb Tmax Output Short-circuit Current Tamb = +25°C Tmin Tamb Tmax Output Voltage Swing Tamb = +25°C ±Vopp Tmin Tamb Tmax RL = RL = RL = RL = 2k 10k 2k 10k ±11 50 25 80 80 Min. Typ. 3 10 5 100 4 200 20 V/mV 200 dB 86 Max. 10 13 µV/°C pA nA nA 20 Unit mV
Iib
Avd
SVR
IC C Vicm CMR
1.4 +15 -12 86
3.4 3.4
mA V dB
70 70 10 10 10 12 10 12 12
mA 40 60 60 V 12 13.5
IO S
SR tr Kov GBP Ri
Slew Rate Vi = 10V, RL = 2k, CL = 100pF, Tamb = +25°C, unity gain Rise Time Vi = 20mV, RL = 2k, CL = 100pF, Tamb = +25°C, unity gain Overshoot Vi = 20mV, RL = 2k, CL = 100pF, Tamb = +25°C, unity gain Gain Bandwidth Product f = 100kHz, Tamb = +25°C,Vin = 10mV, RL = 2k, CL = 100pF Input Resistance
V/µs 16 µs 0.1 % 10 MHz 2.5 4 1012 0.01 15 45 nV ----------Hz Degrees
THD
en m
1.
Total Harmonic Distortion ( f = 1kHz, Av = 20dB RL = 2k, CL = 100pF, Tamb = +25°C,Vo = 2Vpp)
Equivalent Input Noise Voltage RS = 100, f = 1KHz Phase Margin
T he input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature.
MAXIMUM PEAK-TO-PEAK OUTPUT
3/9
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