Details, datasheet, quote on part number: M27C2001
CategoryMemory => ROM => OTP ROM
Description2 Mbit (256KB X8) uv EPROM And OTP ROM
CompanyST Microelectronics, Inc.
DatasheetDownload M27C2001 datasheet
Cross ref.Similar parts: W27C02
Find where to buy


Features, Applications


PROGRAMMING VOLTAGE: 0.25V PROGRAMMING TIME: 100s/word ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: 61h

DESCRIPTION The is a high speed 2 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large programs and is organised by 8 bits. The FDIP32W (window ceramic frit-seal package) and LCCC32W (leadless chip carrier package) have a transparent lids which allow the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the M27C2001 is offered PDIP32, PLCC32 and x 20 mm) packages.

A0-A17 Q0-Q7 Address Inputs Data Outputs Chip Enable Output Enable Program Supply Voltage Ground

Symbol TA TBIAS TSTG VIO (2) VCC VA9 (2) VPP Parameter Ambient Operating Temperature (3) Temperature Under Bias Storage Temperature Input or Output Voltage (except A9) Supply Voltage A9 Voltage Program Supply Voltage Value to 14 Unit C

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum DC voltage on Input or Output is 0.5V with possible undershoot to 2.0V for a period less than 20ns. Maximum DC voltage on Output CC +0.5V with possible overshoot to VCC +2V for a period less than 20ns. 3. Depends on range.

Mode Read Output Disable Program Verify Program Inhibit Standby Electronic Signature
Q7-Q0 Data Out Hi-Z Data In Data Out Hi-Z Codes
Identifier Manufacturer's Code Device Code A0 VIL VIH 0 1 Hex Data 20h 61h


Related products with the same datasheet
Some Part number from the same manufacture ST Microelectronics, Inc.
M27C2001-10-1 2 Mbit (256KB X8) uv EPROM And OTP ROM
M27C2001-10B1TR 2 Mbit 256kb X 8 uv EPROM And OTP EPROM
M27C2001-10C1 2 Mbit (256KB X8) uv EPROM And OTP ROM
M27C2001-10C1TR 2 Mbit 256kb X 8 uv EPROM And OTP EPROM
M27C2001-10F1 2 Megabit -256k X 8- uv EPROM And OTP ROM
M27C2001-10F1TR 2 Mbit 256kb X 8 uv EPROM And OTP EPROM
M27C2001-12-1 2 Mbit (256KB X8) uv EPROM And OTP ROM
M27C2001-12B1TR 2 Mbit 256kb X 8 uv EPROM And OTP EPROM
M27C2001-15-1 2 Mbit (256KB X8) uv EPROM And OTP ROM
M27C2001-15B1TR 2 Mbit 256kb X 8 uv EPROM And OTP EPROM
Same catergory

34RC02JE-TE13 : 2-kb I2C Serial EePROM, Serial Presence Detectthe CAT34RC02 is a 2-kb Serial CMOS EePROMinternally Organized as 256 Words of 8 Bits Each. Catalyst Sadvanced CMOS Technology Substantially Reducesdevice Power Requirements. The CAT34RC02 .

93LC76-IP : 8k/16k 2.5v Microwire Serial EePROM. Single supply with programming operation down to 2.5V Low power CMOS technology 1 mA active current typical 5 A standby current (typical) at 3.0V ORG pin selectable memory configuration x 16 bit organization x 16 bit organization (93LC86) Self-timed ERASE and WRITE cycles (including auto-erase) Automatic ERAL before WRAL Power on/off data protection.

ACT-S1M32B-080F14C : Act-f1m32 High Speed 32 Megabit Boot Block Flash Multichip Module. ACTF1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module MCM Package s Overall Configuration s +5V Operation (Standard) or +3.3V (Consult Factory) s Access Times 80, 100 and ( 5V VCC) or +12V Programing s Erase/Program Cycles q 100,000 Commercial q 10,000 Military and Industrial s Sector Architecture (Each Die) q One 16K Protected Boot Block.

AM28F512 : 512K. 512 Kilobit (64 K X 8-bit) CMOS 12.0 Volt, Bulk Erase Flash Memory.

DPSD128MXE8XKY5 : Sdram, 1 Gigabit. : The Memory StackTM series is a family of interchangeable memory devices. The 1 Gigabit SDRAM assembly utilizes the space saving LP-StackTM technology to increase memory density. This stack is constructed with two x 8) SDRAMs. This 1Gb LP-StackTM has been designed to fit in the same footprint as the x 8) SDRAM TSOPII monolithic. This stack allows for system.

HYM71V32C735HCT4 : ->Registered DIMM. 32Mx72 Bits PC133 Sdram Registered Dimm With Pll, Based on 32Mx4 Sdram With Lvttl, 4 Banks & 4K Refresh.

IDT7203 : CMOS Asynchronous Fifo 2048 X 9, 4096 X 9, 8192 X 9 And 16384 X 9. First-In/First-Out Dual-Port memory x 9 organization x 9 organization x 9 organization x 9 organization (IDT7206) High-speed: 12ns access time Low power consumption Active: 770mW (max.) Power-down: 44mW (max.) Asynchronous and simultaneous read and write Fully expandable in both word depth and width Pin and functionally compatible with IDT720X family.

K4E641612D : = K4E641612D 4M X 16bit CMOS Dynamic RAM With Extended Data Out ;; Organization = 4Mx16 ;; Mode = Edo ;; Voltage(V) = 3.3 ;; Refresh = 4K/64ms ;; Speed(ns) = 45,50,60 ;; Package = TSOP2 ;; Power = C,l,i,p ;; Production Status = Eol ;; Comments = LVTTL.

LC66354S : Four-bit Single-chip Microcontrollers With 4, 6, And 8 KB of On-chip ROM.

LH28F008SCN-L85 : 8M Symmetrical Block, Smart Voltage Flash Memory.

M11B11664A : EDO DRAM. Org. = 64KbX16 ;; = Edo 5V ;; Refresh = 256 ;; Speed/ Clock Freq. = 25/30ns ;; Package = 44/40-TSOPII.

M34D64BN : 64/32 Kbit Serial i Bus EePROM With Hardware Write Control on Top Quarter of Memory.

M464S1654CTS : SODIMM. = M464S1654CTS 16M X 64 Sdram Sodimm Based on 16M X 16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 128 ;; Organization = 16Mx64 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7A,1H,1L ;; #of Pin = 144 ;; Power = C,l ;; Component Composition = (16Mx16)x4+EEPROM ;; Production Status = Mass Production ;; Comments.

M69AW024B : PSRAM Asynchronous. 16 Mbit (1M X16) 3V Supply, Asynchronous Psram. ACCESS TIME: 60ns, 70ns LOW STANDBY CURRENT: 70A DEEP POWER DOWN CURRENT: 10A LOW VCC DATA RETENTION: 2.3V COMPATIBLE WITH STANDARD LPSRAM This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. TABLE OF CONTENTS SUMMARY . 4 Figure 2. Logic Diagram. 4 Figure 3. TFBGA.

MR18R082GAN1 : Normal RIMM. = MR18R082GAN1 ;; Density(MB) = 256 ;; Organization = 128Mx18 ;; Component Composition = 144M(2nd)x16 ;; Voltage(V) = 2.5 ;; Refresh = 16K/32m(1.9us) ;; Speed(MHz)/ TRAC(ns) = 300/53.3,356/45,400/45 ;; #of Pin = 184 ;; Production Status = Eol ;; Comments = Ds,ecc.

MSM51V17100 : Asynchronous->3.3V FPM. 16,777,216-word X 1-bit Dynamic RAM : Fast Page Mode Type.

TC55NEM216AFTN : Low Power. Organization = 256Kx16 ;; VDD(V) = 5 ;; Package = 54pin Tsop ii ;; Functionlity = Full CMOS ;; Speed(ns) = 55, 70 ;; Comment =.

DS2433 : 4Kb 1-Wire EEPROM The DS2433 4Kb 1-Wire EEPROM identifies and stores relevant information about the product to which it is associated. This lot or product specific information can be accessed with minimal interface, for example a single port pin of a microcontroller. The DS2433 consists of a factory-lasered registration number that includes a unique.

GS8321Z32E-250T : 1M X 32 ZBT SRAM, 6.5 ns, PBGA165. s: Memory Category: SRAM Chip ; Density: 33554 kbits ; Number of Words: 1000 k ; Bits per Word: 32 bits ; Package Type: 15 X 17 MM, 1 MM PITCH, FPBGA-165 ; Pins: 165 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 6.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

X76F400HG : 512 X 8 FLASH 5V PROM, UUC. s: Memory Category: Flash, PROM ; Density: 4 kbits ; Number of Words: 512 k ; Bits per Word: 8 bits ; Package Type: ROHS COMPLIANT, DIE ; Logic Family: CMOS ; Supply Voltage: 5V ; Operating Temperature: 0 to 70 C (32 to 158 F).

0-C     D-L     M-R     S-Z