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Part: M28256-25WMS1T
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: 256 Kbit 32kb x8 Parallel EePROM With Software Data Protection
Company: ST Microelectronics, Inc.
Datasheet: Download M28256-25WMS1T datasheet File size : 45 kB
Request For quote: Find where to buy M28256-25WMS1T
Datasheet text preview:
M28256
256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection
PRELIMINARY DATA
FAST ACCESS TIME: 90ns at 5V 120ns at 3V SINGLE SUPPLY VOLTAGE: 5V ± 10% for M28256 2.7V to 3.6V for M28256-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE: 64 Bytes Page Write Operation Byte or Page Write Cycle ENHANCED END of WRITE DETECTION: Data Polling Toggle Bit STATUS REGISTER HIGH RELIABILITY DOUBLE POLYSILICON, CMOS TECHNOLOGY: Endurance >100,000 Erase/Write Cycles Data Retention >10 Years JEDEC APPROVED BYTEWIDE PIN OUT ADDRESS and DATA LATCHED ON-CHIP SOFTWARE DATA PROTECTION
28
1
PDIP28 (BS)
PLCC32 (KA)
28
1
SO28 (MS) 300 m ils
TSOP28 (NS) 8 x13.4mm
Figure 1. Logic Diagram
VCC
DESCRIPTION The M28256 and M28256-W are 32K x8 low power Parallel EEPROM fabricated with STMicroelectronics proprietary double polysilicon CMOS technology. Table 1 . Signal Names
A0-A14 DQ0-DQ7 W E G VCC VSS Address Input Data Input / Output Write Enable Chip Enable Output Enable Supply Voltage Ground
15 A0-A14
8 DQ0-DQ7
W E G
M28256
VSS
AI01885
January 1999
This is preliminary informatio n on a new product n ow in developm ent or undergoing evaluation . Detail s a re subject to change without notice.
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M28256
Figure 2A. DIP Pin Connections Figure 2B. LCC Pin Connections
AI01886 AI01887
Warning: N C = Not Connected, DU = Don't Use.
Figure 2C. SO Pin Connections
Figure 2D. TSOP Pin Connections
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
1 2 3 4 5 6 7 M28256 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
AI01888
VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
G A11 A9 A8 A13 W VCC A14 A12 A7 A6 A5 A4 A3
22
DQ1 DQ2 VSS DU DQ3 DQ4 DQ5 21 28 1 M28256 15 14 7 8
AI01889
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS
1 2 3 4 5 6 7 M28256 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC W A13 A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
A6 A5 A4 A3 A2 A1 A0 NC DQ0
A7 A 12 A 14 DU VCC W A 13 1 32 A8 A9 A11 NC G A10 E DQ7 DQ6 9 M28256 25 17 A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2
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M28256
Table 2 . Absolute Maximum Ratings (1)
Symbol TA T STG VCC V IO VI VESD Parameter Ambient Operating Temperature Storage Temperature Range Supply Voltage Input/Output Voltage Input Voltage Electrostatic Discharge Voltage (Human Body model)
(3) (2)
Value 40 to 85 65 to 150 0.3 to 6.5 0.3 to VCC +0.6 0.3 to 6.5 4000
Unit °C °C V V V V
Notes: 1. Except for the rating "Operating Temperature Range", s tresses above those lis ted in the Table "Absolute Maximum Ra tings" may cause permanent damage to the device. These are stress ratings only and operation of the dev ice at these or any other c onditions above those indicated in the Operating s ections of this specification is not i mplied. Exp osure to Absolute Maximum R ating conditions for extended periods may affect device reliability. Refer also to the STMicro electronics S URE Program and other relevant quality documents. 2. Depends on range. 3. 100pF through 1500 ; MIL-STD-883C, 3015.7
Figure 3. Block Diagram
E
G
W
VPP GEN
RESET
CONTROL LOGIC
X DECODE
A6-A14 (Page Address)
ADDRESS LATCH
256K ARRAY
A0-A5
ADDRESS LATCH
Y DECODE
SENSE AND DATA LATCH
I/O BUFFERS
PAGE LOAD TIMER STATUS TOGGLE BIT DATA POLLING
AI01697
DQ0-DQ7
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