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Part: M28C64-A20MS1T
Category:
Discrete
-> Diodes & Rectifiers
-> Protection
Description: 64 Kbit 8k X 8 Parallel EePROM With Software Data Protection
Company: ST Microelectronics, Inc.
Datasheet: Download M28C64-A20MS1T datasheet File size : 24 kB
Request For quote: Find where to buy M28C64-A20MS1T
Datasheet text preview:
M28C64
64 Kbit (8K x 8) Parall el EEPROM With Software Data Protection
s
Fast Access Time: 90 ns at VCC=5 V for M28C64 and M28C64-A 120 ns at VCC=3 V for M28C64-xxW
s
Single Supply Voltage: 4.5 V to 5.5 V for M28C64 and M28C64-A 2.7 V to 3.6 V for M28C64-xxW
28
s s
Low Power C onsumption Fast BYTE and PAGE WRITE (up to 64 Bytes) 1 ms at VCC=4.5 V for M28C64-A 3 ms at VCC=4.5 V for M28C64 5 ms at VCC=2.7 V for M28C64-xxW
1
PDIP 28 (B S)
PLCC32 (KA)
s
Enhanced Write Detection and Monitoring: Ready/Busy Open Drain Output Data Polling T oggle Bit Page Load Timer Status
1 28
s s s s
JEDEC Approved Bytewide Pin-Out Software Data Protection 100000 Erase/Write Cycles (minimum) Data R etention (minimum): 40 Years for M28C64 and M28C64-xxW 10 Years for M28C64-A
SO28 (MS) 300 mil width
TSO P28 (NS) 8 x 13.4 mm
Figure 1. Logic Diagram
VCC
Table 1. Signal Names
13
A 0-A12 D Q0-D Q7 W E G RB VCC VSS Address Input Dat a Input / O utput Wr ite E nable Chip Enable Out put E nable Ready / B usy Supply Voltage
8 DQ0-DQ7
A0-A12
W E
M28C64 RB
G
VSS
Gro und
AI01350C
June 2000
1/24
M28C64
Figure 2A. DIP Connections
RB A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 M28C64 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC W NC A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
Figure 2C. SO Connections
RB A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 M28C64 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC W NC A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
AI01351C
AI01353C
Note: 1. NC = Not Connected
Note: 1. NC = Not Connected
Figure 2B. PLLC Connections
RB DU VCC W NC A7 A12
Figure 2D. TSOP Connections
G A11 A9 A8 NC W VCC RB A12 A7 A6 A5 A4 A3 22 21 A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2
1 32 A6 A5 A4 A3 A2 A1 A0 NC DQ0 A8 A9 A11 NC G A10 E DQ7 DQ6
9
M28C64
25
28 1
M28C64
15 14
17 DQ1 DQ2 VSS DU DQ3 DQ4 DQ5
7
8
AI01354C
AI01352D
Note: 1. NC = Not Connected 2. DU = Do Not Use
Note: 1. NC = Not Connected
DESCRIPTION The M28C64 devices consist of 8192x8 bits of low power, parallel EEPROM, f abricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer f ast access time, with low power dissipation, and require a single voltage supply (5V or 3V, depending on the option chosen). The device has been designed to offer a flexible microcontroller interface, featuring both hardware
and software handshaking, with Ready/Busy, Data Polling and Toggle Bit. T he device supports a 64 byte Page Write operation. Software Data Protection (SDP) is also supported, using the standard JEDEC algorithm.
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M 28C 64
Table 2. Absolute Maximum Ratings 1
Symbol TA T STG VCC VIO VI VESD Parameter Am bient Operat ing Temperature Sto rage Temperature Su pply Voltage Inp ut or Outp ut Voltage Inp ut Voltage Electros tatic D ischarge Voltage (Human Body model) 2 Value -40 to 125 -65 to 150 -0.3 to VCC+1 -0.6 to VCC+ 0.6 -0.3 to 6.5 4000 Unit °C °C V V V V
Note: 1. Except for the rati ng "Operating T emperature Range", stresses above those liste d in t he Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above t hose indicated in t he Operating sections of t his s pecification is not impl ied. Exposure t o A bsolute M aximum R ating conditions f or extended periods may affe ct device reliability. Refer also to the ST SU RE Program and other relevant quality documents. 2. MIL-STD-88 3C, 3015.7 (100 pF, 1500 )
Figure 3. Block Diagram
RB E G W
VPP GEN
RESET
CONTROL LOGIC
X DECODE
A6-A12 (Page Address)
ADDRESS LATCH
64K ARRAY
A0-A5
ADDRESS LATCH
Y DECODE
SENSE AND DATA LATCH
I/O BUFFERS
PAGE LOAD TIMER STATUS TOGGLE BIT DATA POLLING
AI01355
DQ0-DQ7
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