Details, datasheet, quote on part number: M28C64
PartM28C64
CategoryMemory => ROM => EPROM => 64 Kb
DescriptionObsolete - 64K (8K X 8) Parallel EePROM With Software Data Protection
CompanyST Microelectronics, Inc.
DatasheetDownload M28C64 datasheet
Quote
Find where to buy
 
  

 

Features, Applications
64 Kbit x 8) Parallel EEPROM With Software Data Protection

Low Power Consumption Fast BYTE and PAGE WRITE (up to 64 Bytes) VCC=4.5 V for VCC=4.5 V for VCC=2.7 V for M28C64-xxW

Enhanced Write Detection and Monitoring: Ready/Busy Open Drain Output Data Polling Toggle Bit Page Load Timer Status

JEDEC Approved Bytewide Pin-Out Software Data Protection 100000 Erase/Write Cycles (minimum) Data Retention (minimum): 40 Years for M28C64 and 10 Years for M28C64-A

G RB VCC VSS Address Input Data Input / Output Write Enable Chip Enable Output Enable Ready / Busy Supply Voltage

This is information on a product still in production but not recommended for new designs.

DESCRIPTION The M28C64 devices consist of 8192x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply or 3V, depending on the option chosen). The device has been designed to offer a flexible microcontroller interface, featuring both hardware

and software handshaking, with Ready/Busy, Data Polling and Toggle Bit. The device supports a 64 byte Page Write operation. Software Data Protection (SDP) is also supported, using the standard JEDEC algorithm.

Symbol TA T STG VCC VIO VI VESD Parameter Ambient Operating Temperature Storage Temperature Supply Voltage Input or Output Voltage Input Voltage Electrostatic Discharge Voltage (Human Body model) 2 Value 6.5 4000 Unit C

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents. 3015.7 (100 pF, 1500 )

PAGE LOAD TIMER STATUS TOGGLE BIT DATA POLLING

 

Related products with the same datasheet
M28C64-12-6
M28C64-15-6
M28C64-20-6
M28C64-A
M28C64-AW
M28C64-W
Some Part number from the same manufacture ST Microelectronics, Inc.
M28C64-12-6 Obsolete - 64K (8K X 8) Parallel EePROM With Software Data Protection
M28C64-12BS1T 64 Kbit 8k X 8 Parallel EePROM With Software Data Protection
M28C64-15-6 Obsolete - 64K (8K X 8) Parallel EePROM With Software Data Protection
M28C64-15BS1T 64 Kbit 8k X 8 Parallel EePROM With Software Data Protection
M28C64-20-6 Obsolete - 64K (8K X 8) Parallel EePROM With Software Data Protection
M28C64-20BS1T 64 Kbit 8k X 8 Parallel EePROM With Software Data Protection
Same catergory

24AA65-P : 64k 1.8v i 2 C o Smart Serial o EePROM. Voltage operating range: 6.0V - Peak write current 6.0V - Maximum read current 6.0V - Standby current 1 A typical Industry standard two wire bus protocol I2CTM compatible 8 byte page, or byte modes available 2 ms typical write cycle time, byte or page 64-byte line input cache for fast write loads to 8 devices may be connected to the same bus for to 512K.

AT49BV040 : 4-megabit (512kx8) Single 2.7v Battery-voltage (tm) Flash Memory: 512kx8.

CY7C1325F-100AC : Standart Synchronous SRAM. by 18 common I/O Fast clock-to-output times ns (133-MHz version) ns (117-MHz version) ns (100-MHz version) Two-bit wrap-around counter supporting either interleaved or linear burst sequence Separate processor and controller address strobes provide direct interface with the processor and external cache controller Synchronous self-timed write Asynchronous.

CY7C1347D-117AC : Standart Synchronous SRAM. Fast access times: 2.5 and 3.5 ns Fast clock speed: 225, 200, and 166 MHz 1.5 ns set-up time and 0.5 ns hold time Fast OE access times: 2.5 ns and 3.5 ns Optimal for depth expansion (one cycle chip deselect to eliminate bus contention) 3.3V 5% and +10% power supply or 2.5V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSS at all inputs.

CY7C164 : 16Kb x4 Static RAM. High speed 15 ns Output enable (OE) feature (CY7C166) CMOS for optimum speed/power Low active power 633 mW Low standby power 110 mW TTL-compatible inputs and outputs Automatic power-down when deselected three-state drivers. The CY7C166 has an active LOW Output Enable (OE) feature. Both devices have an automatic powerdown feature, reducing the power.

HYS72D32000GU-7-B : 128MB - 2GB, 184pin. 2.5V 184Pin Unbuffered DDR-I SDRAM Modules & 512MByte Modules PC2700, PC3200 Data Sheet Revision 1.01 (Feb. 2003) 184Pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications One bank 64, 32Mx72 and two bank 72 organization JEDEC standard Double Data Rate Synchronous DRAMs (DDR-I SDRAM) Single.

K4F640812B : = K4F640812B 8M X 8bit CMOS Dynamic RAM With Fast Page Mode ;; Organization = 8Mx8 ;; Mode = Fast Page ;; Voltage(V) = 3.3 ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; Package = 32SOJ,32TSOP2 ;; Power = Normal,low ;; Production Status = Eol ;; Comments = -.

M390S1723AT1 : Registered DIMM. = M390S1723AT1 16M X 72 Sdram Dimm With PLL & Register Based on 16M X 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 128 ;; Organization = 16Mx72 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 75 ;; #of Pin = 168 ;; Power = C ;; Component Composition = (16Mx8)x9 ;; Production Status = Eol ;; Comments.

M6MGD137W33TP : S-µMCP(Stacked micro MCP). BY 16-BIT) CMOS FLASH MEMORY BY 16-BIT) CMOS Mobile RAM & Stacked- MCP (micro Multi Chip Package) The is a Stacked micro Multi Chip Package (S- MCP) that contents 128M-bit Flash memory and 32M-bit Mobile RAM a 52-pin TSOP. 128M-bit Flash memory a 8,388,608 words, single power supply and high performance non-volatile memory fabricated by CMOS technology.

M965G0125AP0 : SGRAM AIMM->8M bit. = M965G0125AP0 1M X 64 Sgram Sodimm Based on 512K X 32, 2K Refresh, 3.3V Synchronous Graphic RAMs ;; Organization = 1Mx64 ;; Voltage(V) = 3.3 ;; Speed(ns) = 5.0,6.0,7.0,8.0 ;; Package = 100PQFP ;; #of Pin = 144 ;; Component Composition = (512Kx32)x4 ;; Production Status = Eol ;; Comments = LVTTL.

MH28S72PJG-5 : . Some contents are subject to change without notice. The 134,217,728 - word 72-bit Sy nchronous DRAM stacked structural module. This consist of t hirty -six industry standard 4 Sy nchronous DRAMs in TSOP. The stacked structure of TSOP on a card edge dual inline package prov ides any application where high densities and large of quantities memory are required.

T15M256A : SRAM. Density = 256K ;; Org. = 32KX8 ;; Voltage = 5V ;; Speed(ns) = 35/70 ;; Stadby Current = 2mA ;; Pins/package = 28pin-SOJ,28pin-TSOP-I.

T15M64A : SRAM. Density = 64K ;; Org. = 8KX8 ;; Voltage = 5V ;; Speed(ns) = 50/70/85/100 ;; Stadby Current = 50uA ;; Pins/package = 28pin-DIP,SOJ,SOP,TSOP-I.

V29C51002TJ55 : 2 Megabit (262,144 X 8 BIT) 5 Volt CMOS Flash Memory. V29C51002T/V29C51002B 2 MEGABIT x 8 BIT) 5 VOLT CMOS FLASH MEMORY 256Kx8-bit Organization Address Access Time: 90 ns Single 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 512 bytes per Sector, 512 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Write Cycle Time: 20s (Max) Minimum 10,000 Erase-Program Cycles Low power.

W24L11STQ : 128kx8, 1m, 3v, 70, Le, S:sop/ T:tsop/ Q:stsop. The is a normal-speed, very low-power CMOS static RAM organized 8 bits that operates on a wide voltage range from to 3.6V power supply. This device is manufactured using Winbond's high performance CMOS technology. Low power consumption: - Active: 144 mW (max.) Access time: 70 nS Single 3.3V power supply Fully static operation All inputs and outputs.

K7K1618U2C-EC33 : QDR SRAM, PBGA165. s: Memory Category: SRAM Chip ; Package Type: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 ; Pins: 165.

MSM5116160DSL-50TS-K : 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44. s: Memory Category: DRAM Chip ; Density: 16777 kbits ; Number of Words: 1000 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50/44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 50 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

MT29F2G08AACWPET:CTR : 256M X 8 FLASH 3V PROM, PDSO48. s: Memory Category: Flash, PROM ; Density: 2147484 kbits ; Number of Words: 256000 k ; Bits per Word: 8 bits ; Package Type: TSOP, LEAD FREE, PLASTIC, TSOP1-48 ; Pins: 48 ; Supply Voltage: 3.3V ; Operating Temperature: -40 to 85 C (-40 to 185 F).

W55206B : 128 X 1 STANDARD SRAM, 80 ns, PDIP18. s: Memory Category: SRAM Chip ; Density: 0 kbits ; Number of Words: 128 k ; Bits per Word: 1 bits ; Pins: 18 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 80 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

 
0-C     D-L     M-R     S-Z