|Description||1 Megabit -128k X 8, Chip Erase- Flash Memory|
|Company||ST Microelectronics, Inc.|
|Datasheet||Download M28F101-120N1 datasheet
FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS EXTENDED TEMPERATURE RANGES
DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 100ns makes the device suitable for use in high speed microprocessor systems.
G W VPP VCC VSS May 1996 Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Voltage Ground
Symbol TA TSTG VIO VCC VA9 VPP Parameter Ambient Operating Temperature Storage Temperature Input or Output Voltages Supply Voltage A9 Voltage Program Supply Voltage, during Erase or Programming Value to 14 Unit °C
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.
DEVICE OPERATION The M28F101 FLASH Memory employs a technology similar a 1 Megabit EPROM but adds to the device functionality by providing electrical erasure and programming. These functions are managed by a command register. The functions that are addressed via the command register depend on the voltage applied to the VPP, program voltage, input. When VPP is less than or equal to 6.5V, the command register is disabled and M28F101 functions as a read only memory providing operating modes similar to an EPROM (Read, Output Disable, Electronic Signature Read and Standby). When VPP is raised to 12V the command regsiter is enabled and this provides, in addition, Erase and Program operations. READ ONLY MODES, VPP 6.5V For all Read Only Modes, except Standby Mode, the Write Enable input W should be High. In the Standby Mode this input is don't care. Read Mode. The M28F101 has two enable inputs, E and G, both of which must be Low in order to output data from the memory. The Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data on to the output, independant of the device selection. Standby Mode. In the Standby Mode the maximum supply current is reduced. The device is placed in the Standby Mode by applying a High to the Chip Enable (E) input. When in the Standby Mode the outputs are in a high impedance state, independant of the Output Enable (G) input.
Output Disable Mode. When the Output Enable (G) is High the outputs are in a high impedance state. Electronic Signature Mode. This mode allows the read out of two binary codes from the device which identify the manufacturer and device type. This mode is intended for use by programming equipment to automatically select the correct erase and programming algorithms. The Electronic Signature Mode is active when a high voltage 13V) is applied to address line A9 with E and G Low. With A0 Low the output data is the manufacturer code, when A0 is High the output is the device type code. All other address lines should be maintained Low while reading the codes. The electronic signature may also be accessed in Read/Write modes. READ/WRITE MODES, 11.4V VPP 12.6V When VPP is High both read and write operations may be performed. These are defined by the contents of an internal command register. Commands may be written to this register to set-up and execute, Erase, Erase Verify, Program, Program Verify and Reset modes. Each of these modes needs 2 cycles. Every mode starts with a write operation to set-up the command, this is followed by either read or write operations. The device expects the first cycle be a write operation and does not corrupt data at any location in memory. Read mode is set-up with one cycle only and may be followed by any number of read operations to output data. Electronic Signature Read mode is set-up with one cycle and followed by a read cycle to output the manufacturer or device codes.
|Related products with the same datasheet|
|Some Part number from the same manufacture ST Microelectronics, Inc.|
|M28F101-120N3 1 MB 128k X 8, Chip Erase Flash Memory|
|M28F101-150-1 1 Megabit -128k X 8, Chip Erase- Flash Memory|
|M28F101-150K3 1 MB 128k X 8, Chip Erase Flash Memory|
|M28F101-150P1 1 Megabit -128k X 8, Chip Erase- Flash Memory|
|M28F101-150P3 1 MB 128k X 8, Chip Erase Flash Memory|
|M28F101-150P6 1 Megabit -128k X 8, Chip Erase- Flash Memory|
|M28F101-150XK1 1 MB 128k X 8, Chip Erase Flash Memory|
|M28F101-200-1 1 Megabit -128k X 8, Chip Erase- Flash Memory|
|M28F101-200K1 1 MB 128k X 8, Chip Erase Flash Memory|
|M28F101A-100-1 1 Megabit -128k X 8, Chip Erase- Flash Memory|