|Category||Memory => Flash|
|Description||2 MB 256k X 8, Chip Erase Flash Memory|
|Company||ST Microelectronics, Inc.|
|Datasheet||Download M28F201-120K1TR datasheet
± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Active Current: 15mA typical Stand-by Current: 10µA typical 10,000 PROGRAM/ERASE CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: F4h DESCRIPTION The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface. The M28F201 FLASH Memory product is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
G W VPP VCC VSS April 1997 Address Inputs Data Inputs / Outputs Chip Enable Output Enable Write Enable Program Supply Voltage Ground
DEVICE OPERATION The M28F201 FLASH Memory product employs a technology similar a 2 Megabit EPROM but add to the device functionality by providing electrical erasure and programming. These functions are managed by a command register. The functions that are addressed via the command register depend on the voltage applied to the VPP, program voltage, input. When VPP is less than or equal to 6.5V, the command register is disabled and the M28F201 functions as a read only memory providing operating modes similar to an EPROM (Read, Output Disable, Electronic Signature Read and Standby). When VPP is raised to 12V the command register is enabled and this provides, in addition, Erase and Program operations. READ ONLY MODES, VPP 6.5V For all Read Only Modes, except Standby Mode, the Write Enable input W should be High. In the Standby Mode this input is 'don't care'. Read Mode. The M28F201 has two enable inputs, E and G, both of which must be Low in order to output data from the memory. The Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data on to the output, independantof the device selection.
Symbol TA TSTG VIO VCC VA9 VPP Parameter Ambient Operating Temperature Storage Temperature Input or Output Voltages Supply Voltage A9 Voltage Program Supply Voltage, during Erase or Programming Value to 14 Unit °C
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.- DQ7 Data Output Hi-Z Codes Data Output Data Input Hi-Z
Output Disable Standby Electronic Signature Read
Notes: X = VIL or VIH. 2. Refer also to the Command table.
Identifier Manufacturer's Code Device Code A0 VIL VIH DQ0 0 Hex Data 20h F4h
|Related products with the same datasheet|
|Some Part number from the same manufacture ST Microelectronics, Inc.|
|M28F201-120K3R 2 MB 256k X 8, Chip Erase Flash Memory|
|M28F201-120N1 Memory Configuration 256Kx8 Memory Type Flash Memory Size 2 M-bit 2Mb (256K8) Flash Memory - 120ns Access (TSOP)|
|M28F201-120N1R 2 MB 256k X 8, Chip Erase Flash Memory|
|M28F256 256k -32k X 8, Chip Erase- Flash Memory|
|M28F256-10B1TR 256k ( 32k X8, Chip Erase ) Flash Memory|