Details, datasheet, quote on part number: M28R400CB
PartM28R400CB
CategoryMemory => Flash => NOR Flash => Advanced Architecture Boot Block 1.8V
TitleAdvanced Architecture Boot Block 1.8V
DescriptionKnown Good Die 4 Mbit (256KB X16) 1.8V Supply Flash Memory
CompanyST Microelectronics, Inc.
DatasheetDownload M28R400CB datasheet
Quote
Find where to buy
 
  

 

Features, Applications
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

FEATURES SUMMARY s SUPPLY VOLTAGE VDD to 2.2V Core Power Supply VDDQ= to 2.2V for Input/Output VPP = 12V for fast Program (optional)

ACCESS TIME: 100ns PROGRAMMING TIME 10s typical Double Word Programming Option

COMMON FLASH INTERFACE 64 bit Security Code MEMORY BLOCKS Parameter Blocks (Top or Bottom location) Main Blocks

BLOCK LOCKING All blocks locked at Power Up Any combination of blocks can be locked WP for Block Lock-Down

SECURITY 64 bit user Programmable OTP cells 64 bit unique device identifier One Parameter Block Permanently Lockable

AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, 882Ah Bottom Device Code, M28R400CB: 882Bh

TABLE OF CONTENTS SUMMARY DESCRIPTION. 5 Figure 2. Logic Diagram. 3 Table 1. Signal Names. 3 FUNCTIONAL SPECIFICATION. 4 Table 2. Product Specification. 4 Table 3. Operating Conditions. 4 Table 4. Read AC Characteristics. 4 Table 5. Write AC Characteristics. 4 Table 6. Physical Specification. 4 Table 7. Manufacturing Information. 4 DIE SPECIFICATIONS. 5 Figure 3. Die Photograph and Pad Location. 5 Figure 4. Wafer/Die Orientation. 5 Table 8. Pad Extraction. 6 PRODUCT TEST FLOW. 7 Figure 5. Product Test Flow. 7 HANDLING INSTRUCTIONS Processing. 8 Storage. 8 PART NUMBERING. 9 Table 9. Ordering Information Scheme. 9 REVISION HISTORY. 10 Table 10. Document Revision History. 10

SUMMARY DESCRIPTION The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. ST's Known Good Die products are as reliable and of the same quality as products delivered in packages. This datasheet should be read in conjunction with the full M28R400C datasheet. The a 4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage to 2.2V) supply. VDDQ allows to drive the I/O pin down 1.65V. An optional 12V VPP power supply is provided to speed up customer programming. The device features an asymmetrical blocked architecture. The M28R400C has an array of 15 blocks: 8 Parameter Blocks of 4 KWord and 7 Main Blocks of 32 KWord. M28R400CT has the Parameter Blocks at the top of the memory address space while the M28R400CB locates the Parameter Blocks starting from the bottom. The M28R400C features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and block erase. When VPP VPPLK all blocks are protected against program or block erase. All blocks are locked at power-up. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The device includes a 128 bit Protection Register and a Security Block to increase the protection of a system design. The Protection Register is divided into two 64 bit segments, the first one contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. The Security Block, parameter block 0, can be permanently protected by the user. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the tim-

ings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The M28R400C are supplied with all the bits erased (set to `1') Figure 2. Logic Diagram

RP WP VDD VDDQ VPP VSS Address Inputs Data Input/Output Chip Enable Output Enable Write Enable Reset Write Protect Core Power Supply Power Supply for Input/Output Optional Supply Voltage for Fast Program & Erase Ground


 

Related products with the same datasheet
M28R400CT
Some Part number from the same manufacture ST Microelectronics, Inc.
M28R400CB-KGD Known Good Die 4 Mbit (256KB X16) 1.8V Supply Flash Memory
M28R400CB120ZB6T 4 Mbit (256KB X16, Boot BLOCK) 1.8V Supply Flash Memory
M28R400CT Known Good Die 4 Mbit (256KB X16) 1.8V Supply Flash Memory
M28R400CT120ZB6 4 Mbit (256KB X16, Boot BLOCK) 1.8V Supply Flash Memory
M28R400CTB120ZB1T 4 Mbit ( 256kb X16, Boot Block ) 1.8v Supply Flash Memory
M28W160B-GBT 16 Mbit 1mb X16, Boot Block Low Voltage Flash Memory
M28W160BB 16 Mbit (1MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W160BB100ZB6T
M28W160BT
M28W160BT100GB6T
M28W160BTB100GB1T 16 Mbit 1mb X16, Boot Block Low Voltage Flash Memory
M28W160CB 16 Mbit (1MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W160CB100N6T
M28W160CT
M28W160CT70N1T
M28W160ECB 16 Mbit (1Mbx16, Boot Block) 3V Supply Flash Memory
M28W320BB 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W320C-GBT 32 Mbit 2mb X16, Boot Block Low Voltage Flash Memory
M28W320CB 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W320CB100GB1T 32 Mbit 2mb X16, Boot Block Low Voltage Flash Memory
M28W320CB70N6 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
Same catergory

AT60142E : Military & Aerospace. Rad Tolerant 512K X 8 Very Low Power CMOS SRAM. Operating Voltage: 3.3V Access Time: 15 ns(Preview), 20 ns Very Low Power Consumption Active: 684 mW (Max) Standby: 215 W (Typ) Wide Temperature Range: +125C 500 Mils Width Package TTL-Compatible Inputs and Outputs Asynchronous Designed on 0.25 Micron Process Latch-up Immune 200 Krads Capability The is a very low power CMOS static RAM organized.

IDT707278 : Multiport->64K. High-speed Bank-switchable Dual-ported SRAM With External Bank Selects: 32kx16.

KM732V688T : SB & SPB. = KM732V688T 64Kx32-Bit Synchronous Pipelined Burst SRAM ;; Organization = 64Kx32 ;; Operating Mode = SPB ;; VDD(V) = 3.3 ;; Access Time-tCD(ns) = 7.0,7.0 ;; Speed-tcyc (MHz) = 75,75 ;; I/o Voltage(V) = 3.3 ;; Package = 100TQFP,100QFP ;; Production Status = Eol ;; Comments = Design is Not Recommended.

M15515EJ5V0DS00 : . 32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY BY 8-BIT (BYTE MODE) BY 16-BIT (WORD MODE) The is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory can be erased at a low voltage 3.6 V) supplied from a single power source, or the contents of the entire chip can be erased. Two modes of memory organization, BYTE mode.

M35102-C20 : Contactless Memory Chip With 64-bit Unique Serial id 13.56 Mhz, 2048-bit High Endurance EePROM.

M364E1600BJ0 : Buffered DIMM. = M364E1600BJ0 16Mx64 DRAM Dimm Using 16Mx4,4K&8K Refresh,5V ;; Density(MB) = 128 ;; Organization = 16Mx64 ;; Mode = Edo ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)x16+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered.

M470L0914ET0 : = M470L0914ET0 184Pin Unbuffered Dimm Based on 128Mb E-die (x16) ;; Density(MB) = 64 ;; Organization = 8Mx64 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = B3,A2,B0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (8Mx16)x4 ;; Production Status = Eol ;; Comments = -.

MSM54V16272 : 256K X 16 DRAM. This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 The a 4-Mbit CMOS multiport DRAM composed by 16-bit dynamic RAM, and by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between.

MT4LC16M4A7 : 16 Meg X 4 FPM DRAM, 32-Pin Soj, 32-Pin Tsop, , Status:end of Life. Single +3.3V 0.3V power supply Industry-standard x4 pinout, timing, functions, and packages 13 row, 11 column addresses (A7) 12 row, 12 column addresses (T8) High-performance CMOS silicon-gate process All inputs, outputs and clocks are LVTTL-compatible FAST-PAGE-MODE (FPM) access 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms Optional.

MT4LC4M16N3 : 4 Meg X 16 Edo DRAM, 50-Pin Tsop, , Status: End of Life. Single +3.3V 0.3V power supply Industry-standard x16 pinout, timing, functions, and package 12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3) High-performance CMOS silicon-gate process All inputs, outputs and clocks are LVTTL-compatible Extended Data-Out (EDO) PAGE MODE access 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across.

UT62L51316BS-100LI : Low Speed & Low Power. Org. = 512Kx16 ;; Temp. ( J) = -40~85 ;; Voltage = 2.7~3.6V ;; Speed (ns) = 55/70/100 ;; Icc (Max) (mA) = 40/30/25 ;; Isb1(Max) (uA) = 80/20 ;; Package = 44TSOP-II, 48TFBGA.

CS16LV40963GC-70 : IC,SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC. s: Memory Category: SRAM Chip.

M392B5773DH0-CF8 : 256M X 72 DDR DRAM MODULE, 20 ns, DMA240. s: Memory Category: DRAM Chip ; Density: 19327353 kbits ; Number of Words: 256000 k ; Bits per Word: 72 bits ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 ; Pins: 240 ; Supply Voltage: 1.5V ; Access Time: 20 ns ; Operating Temperature: 0 to 85 C (32 to 185 F).

R1LV0216BSB-5SIS0 : 128K X 16 STANDARD SRAM, 55 ns, PDSO44. s: Memory Category: SRAM Chip ; Density: 2097 kbits ; Number of Words: 128 k ; Bits per Word: 16 bits ; Package Type: TSOP, 0.400 INCH, PLASTIC, TSOP2-44 ; Pins: 44 ; Logic Family: CMOS ; Supply Voltage: 3V ; Access Time: 55 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

70P245L90BYGI8 : 4K X 16 DUAL-PORT SRAM, PBGA100. s: Memory Category: SRAM Chip ; Density: 66 kbits ; Number of Words: 4 k ; Bits per Word: 16 bits ; Package Type: BGA, 0.50 MM PITCH, GREEN, BGA-100 ; Pins: 100 ; Logic Family: CMOS ; Supply Voltage: 1.8V ; Operating Temperature: -40 to 85 C (-40 to 185 F).

7200L12J : 256 X 9 OTHER FIFO, 12 ns, PQCC32. s: Memory Category: FIFO ; Density: 2 kbits ; Number of Words: 256 k ; Bits per Word: 9 bits ; Package Type: PLASTIC, LCC-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 12 ns ; Cycle Time: 20 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

 
0-C     D-L     M-R     S-Z