Details, datasheet, quote on part number: M28W160B-GBT
PartM28W160B-GBT
CategoryMemory => Flash
Description16 Mbit 1mb X16, Boot Block Low Voltage Flash Memory
CompanyST Microelectronics, Inc.
DatasheetDownload M28W160B-GBT datasheet
  

 

Features, Applications
16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory

SUPPLY VOLTAGE VDD to 3.6V: for Program, Erase and Read VDDQ or 2.7V: Input/Output option VPP = 12V: optional Supply Voltage for fast Program

PROGRAMMING TIME: 10s typical Double Word Programming Option

PROGRAM/ERASE CONTROLLER (P/E.C.) COMMON FLASH INTERFACE 64 bit Security Code MEMORY BLOCKS Parameter Blocks (Top or Bottom location) Main Blocks Figure 1. Logic Diagram

BLOCK PROTECTION on TWO PARAMETER BLOCKS WP for Block Protection

AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS of DATA RETENTION Defectivity below 1ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code, 90h Bottom Device Code, M28W160BB: 91h

Figure 2. BGA Connections (Top view through package)

RP WP VDD VDDQ VPP VSS NC Address Inputs Data Input/Output, Command Inputs Data Input/Output Chip Enable Output Enable Write Enable Reset Write Protect Supply Voltage Power Supply for Input/Output Buffers Optional Supply Voltage for Fast Program & Erase Ground Not Connected Internally

Symbol TA TBIAS TSTG VIO VDD, VDDQ VPP Parameter Ambient Operating Temperature (2) Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage Program Voltage Value to 13 Unit C V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Depends on range.

DESCRIPTION The a 16 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-byWord basis. The device is offered in the x 20mm) and the BGA46, 0.75mm ball pitch packages. When shipped, all bits of the M28W160B are in the `1' state. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Each block can be programmed and erased over 100,000 cycles. V DDQ allows to drive the I/O pin down 1.65V. An optional 12V VPP power supply is provided to speed up the program phase at customer production line environment. An internal Command Interface (C.I.) decodes the instructions to access/modify the memory content. The Program/Erase Controller (P/E.C.) automatically executes the algorithms taking care of the timings necessary for program and erase operations. Verification is performed too, unburdening the microcontroller, while the Status Register tracks the status of the operation. The following instructions are executed by the M28W160B: Read Array, Read Electronic Signature, Read Status Register, Clear Status Register, Program, Double Word Program, Block Erase, Program/Erase Suspend, Program/Erase Resume and CFI Query.

Organisation The M28W160B is organised as 1 Mbit by 16 bits. A0-A19 are the address lines; DQ0-DQ15 are the Data Input/Output. Memory control is provided by Chip Enable E, Output Enable G and Write Enable W inputs. The Program and Erase operations are managed automatically by the P/E.C. Block protection against Program or Erase provides additional data security. The upper two (or lower two) parameter blocks can be protected to secure the code content of the memory. WP controls protection and unprotection operations. Memory Blocks The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Tables 3 and 4. The two upper parameter block can be protected from accidental programming or erasure using WP. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed.


 

Some Part number from the same manufacture ST Microelectronics, Inc.
M28W160BB 16 Mbit (1MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W160BB100ZB6T
M28W160BT
M28W160BT100GB6T
M28W160BTB100GB1T 16 Mbit 1mb X16, Boot Block Low Voltage Flash Memory
M28W160CB 16 Mbit (1MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W160CB100N6T
M28W160CT
M28W160CT70N1T
M28W160ECB 16 Mbit (1Mbx16, Boot Block) 3V Supply Flash Memory
M28W320BB 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W320C-GBT 32 Mbit 2mb X16, Boot Block Low Voltage Flash Memory
M28W320CB 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W320CB100GB1T 32 Mbit 2mb X16, Boot Block Low Voltage Flash Memory
M28W320CB70N6 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W320CB90GB1T 32 Mbit 2mb X16, Boot Block Low Voltage Flash Memory
M28W320CB90N6 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W320CB90N6T 32 Mbit 2mb X16, Boot Block Low Voltage Flash Memory
M28W320CT 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
M28W320CT100GB1T 32 Mbit 2mb X16, Boot Block Low Voltage Flash Memory
M28W320CT70N6 32 Mbit (2MB X16, Boot BLOCK) 3V Supply Flash Memory
Same catergory

A29001 : Flash 1Mb x8. 10% for read and write operations n Access times: - 55/70/90 (max.) n Current: 20 mA typical active read current 30 mA typical program/erase current 1 A typical CMOS standby n Flexible sector architecture - 8 Kbyte/ KbyteX2/ 16 Kbyte/ 32 KbyteX3 sectors - Any combination of sectors can be erased - Supports full chip erase - Sector protection: A hardware.

AT24C21 : 2-wire Serial EePROM 1k (128x8). 2-wire Serial Interface Schmitt Trigger, Filtered Inputs For Noise Suppression DDC1TM/ DDC2TM Interface Compliant for Monitor Identification Low-voltage Operation 2.5 (VCC to 5.5V) Internally Organized 8 100 kHz (2.5V) Compatibility 8-byte Page Write Mode Write Protection Available Self-timed Write Cycle (10 ms max) High Reliability Endurance: 1 Million.

AT27C080 : ->UV/EPROM. 8-mb (1mx8) uv Erasable EPROM. Fast Read Access Time 90 ns Low Power CMOS Operation 100 A Max Standby 40 mA Max Active at 5 MHz JEDEC Standard Packages 32-lead PLCC 32-lead 600-mil PDIP 32-lead TSOP 10% Supply High-Reliability CMOS Technology 2,000V ESD Protection 200 mA Latchup Immunity RapidTM Programming Algorithm 50 s/Byte (Typical) CMOS and TTL Compatible Inputs.

CY7C43684-7AC : 1K/4K X36 x2 Bidirectional Synchronous Fifo w/ Bus Matching. High-speed, low-power, Bidirectional, First-In, First-Out (FIFO) memories w/ bus matching capabilities (CY7C43684) 0.35-micron CMOS for optimum speed/power High-speed 133-MHz operation (7.5 ns read/write cycle times) Low power ICC 100 mA ISB = 10 mA Fully asynchronous and simultaneous read and write operation permitted Mailbox bypass register for each.

FM25040 : Serial FRAM. Density = 4Kbit ;; Interface = Spi Mode 0 ;; Speed = 2.1MHz ;; VDD = 5V.

HB28B064RM2 : MultiMediaCard. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

HY5DU56822CLT : . This document is a general product and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2/ Apr. 2003 The Hynix HY5DU56422, HY5DU56822 and HY5DU561622 are a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main.

HY62256A : 32kx8bit CMOS SRAM. The Fully static operation and HY62256A/HY62256A-I Tri-state outputs is a high-speed, low TTL compatible inputs power and x 8-bits and outputs CMOS Static Random Low power consumption Access Memory -2.0V(min.) data fabricated using retention Hyundai's high Standard pin performance CMOS configuration process technology. The -28 pin 600 mil PDIP HY62256A/HY62256A-I.

KM23V16205D : 16M bit. = KM23V16205D 16M-Bit(1Mx16,512Kx32) CMOS Mask ROM ;; Organization = 1Mx16,512Kx32 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100/30ns(Max.)@CL=100pF ;; Package = 70SSOP ;; Current (mA/uA) = 60/30 ;; Production Status = Mass Production ;; Comments = EOL(Mar.'03).

M27V400 : NND - 4 Mbit (512KB X8 or 256KB X16) uv EPROM And OTP EPROM. M27V400 is replaced by the to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: 100ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 4 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION Active Current 8MHz Stand-by Current 20A PROGRAMMING VOLTAGE: 0.25V PROGRAMMING TIME: 50s/word ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: B8h Figure 1. Logic.

M7040N : Network Search Engines. 64K X 72-BIT Entry Network Search Engine. TABLE MAY BE PARTITIONED INTO UP TO EIGHT (8) OCTANTS (Data entry width in each octant is configurable or 288 bits.) TO 100 MILLION SUSTAINED SEARCHES PER SECOND IN 72-BIT and 144-BIT CONFIGURATIONS TO 50 MILLION SEARCHES PER SECOND IN 36-BIT and 288-BIT CONFIGURATIONS SEARCHES ANY SUB-FIELD IN A SINGLE CYCLE OFFERS BIT-BY-BIT and GLOBAL MASKING SYNCHRONOUS,.

MH8S64DBKG : 512m (8mx64) Sdram Module. Some contents are subject to change without notice. The 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory.

AM93412/DMC : 256 X 4 STANDARD SRAM, 60 ns, CDIP22. s: Memory Category: SRAM Chip ; Density: 1 kbits ; Number of Words: 256 k ; Bits per Word: 4 bits ; Package Type: DIP, HERMETIC SEALED, CERAMIC, DIP-22 ; Pins: 22 ; Logic Family: TTL ; Supply Voltage: 5V ; Access Time: 60 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

FT29F040B-120EC : 512K X 8 FLASH 5V PROM, 120 ns, PDSO32. s: Memory Category: Flash, PROM ; Density: 4194 kbits ; Number of Words: 512 k ; Bits per Word: 8 bits ; Package Type: TSOP, MO-142BBD, TSOP-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 120 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

M36L0R7050L3ZAME : SPECIALTY MEMORY CIRCUIT, PBGA88. s: Density: 134218 kbits ; Number of Words: 8000 k ; Bits per Word: 16 bits ; Package Type: 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88 ; Pins: 88 ; Supply Voltage: 1.8V ; Operating Temperature: -25 to 85 C (-13 to 185 F).

MT4JSF6464HIY-1G0B1 : MEMORY MODULE,SDRAM,DDR,64MX64,CMOS,DIMM,204PIN,PLASTIC. s: Memory Category: DRAM Chip.

 
0-C     D-L     M-R     S-Z