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Part: M29W004BT55N6T
Category:
Memory
-> Flash
Description: 4 Mbit 512kb X8, Boot Block Low Voltage Single Supply Flash Memory
Company: ST Microelectronics, Inc.
Datasheet: Download M29W004BT55N6T datasheet File size : 1053 kB
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Datasheet text preview:
M29W004BT M29W004BB
4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory
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SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME 10µs by Byte typical 11 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) 2 Parameter and 8 Main Blocks
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PROGRAM/ER ASE CONTROLLER Embedded Byte Program algorithm Embedded Multi-Block/Chip Erase algorithm Status Register Polling and Toggle Bits Ready/Busy Output Pin
TSOP40 (N) 10 x 20mm
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ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend Figure 1. Logic Diagram
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TEMPORARY BLOCK UNPROTECTION MODE UNLOCK BYPASS PROGRAM COMMAND Faster Production/Batch Programming LOW POWER CONSUMPTION Standby and Automatic Standby
A0-A18 W E G RP M29W004BT M29W004BB RB 19 VCC
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8 DQ0-DQ7
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100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION Defectivity below 1 ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 20h Top Device Code M29W004BT: EAh Bottom Device Code M29W004BB: EBh
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VSS
AI02954
March 2000
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M29W004BT, M29W004BB
Figure 2. TSOP Connections Table 1. Signal Names
A0-A18 DQ0-DQ7 Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Reset/Block Temporary Unprotect Ready/Busy Output Supply Voltage Ground Not Connected Internally
A16 A15 A14 A13 A12 A11 A9 A8 W RP NC RB A18 A7 A6 A5 A4 A3 A2 A1
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10 M29W004BT 31 11 M29W004BB 30
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AI02950
A17 VSS NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 G VSS E A0
E G W RP RB VCC VSS NC
SUMMARY DESCRIPTION The M29W004B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W004B is fully backward compatible with the M29W004. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can
be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically arranged, see Tables 3 and 4, Block Addresses. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32 Kbyte is a small Main Block where the application may be stored. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. The memory is offered in a TSOP40 (10 x 20mm) package and it is supplied with all the bits erased (set to '1').
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M29W 004BT, M29W004BB
Table 2. Absolute Maximum Ratings (1)
Symbol TA Ambient Operating Temperature (Temperature Range Option 6) TBIAS TSTG VIO (2) VCC VID Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage Identification Voltage 40 to 85 50 to 125 65 to 150 0.6 to 4 0.6 to 4 0.6 to 13.5 °C °C °C V V V Parameter Ambient Operating Temperature (Temperature Range Option 1) Value 0 to 70 Unit °C
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns during transitions.
Table 3. Top Boot Block Addresses M29W004BT
# 10 9 8 7 6 5 4 3 2 1 0 Size (Kbytes) 16 8 8 32 64 64 64 64 64 64 64 Address Range 7C000h-7FFFFh 7A000h-7BFFFh 78000h-79FFFh 70000h-77FFFh 60000h-6FFFFh 50000h-5FFFFh 40000h-4FFFFh 30000h-3FFFFh 20000h-2FFFFh 10000h-1FFFFh 00000h-0FFFFh
Table 4. Bottom Boot Block Addresses M29W004BB
# 10 9 8 7 6 5 4 3 2 1 0 Size (Kbytes) 64 64 64 64 64 64 64 32 8 8 16 Address Range 70000h-7FFFFh 60000h-6FFFFh 50000h-5FFFFh 40000h-4FFFFh 30000h-3FFFFh 20000h-2FFFFh 10000h-1FFFFh 08000h-0FFFFh 06000h-07FFFh 04000h-05FFFh 00000h-03FFFh
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Others parts begin by m2
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