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Part: M74HC75M1R
Category:
Logic
-> HC/HCT->High Speed CMOS
Description: 4 Bit D Type Latch
Company: ST Microelectronics, Inc.
Datasheet: Download M74HC75M1R datasheet File size : 53 kB
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Datasheet text preview:
M74HC75
4 BIT D TYPE LATCH
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H IGH SPEED : tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC =2µA(MAX.) at TA=25°C H IGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL W IDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 75
DIP
SOP
TSSOP
ORDER CODES
PACKAGE DIP SOP TSSOP TUBE M74HC75B1R M74HC75M1R T&R M74HC75RM13TR M74HC75TTR
DESCRIPTION The M74HC75 is an high speed CMOS 4 BIT D TYPE LATCH fabricated with silicon gate C2MOS t ec hnol ogy . It contains two groups of 2 bit latches controlled by an enable input (G1·2 or G3·4). These two latch groups can be used in different circuits. Each latch has Q and Q outputs (1Q - 4Q and 1Q - 4Q). The data applied to the data input is transferred to the
Q and Q outputs when the enable input is taken high and the outputs will follow the data input as long as the enable input is kept high. When the enable input is taken low, the information data applied to the data input is retained at the outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
August 2001
1/10
M74HC75
IINPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No 1, 14, 11, 8 2, 3, 6, 7 4 13 16, 15, 10, 9 12 5 SYMBOL 1Q to 4Q 1D to 4D G3 · 4 G1 · 2 1Q to 4Q GND V CC NAME AND FUNCTION Complementary Latch Outputs Data Inputs Latch Enable Input, latches 3 and 4 Latch Enable Input, latches 1 and 2 Latch Outputs Ground (0V) Positive Supply Voltage
TRUTH TABLE
INPUTS D L H X G H H L OUTPUTS FUNCTION Q L H Qn Q H L Qn
LATCH
LOGIC DIAGRAM
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M74HC75
AB SOLUTE MAXIMUM RATINGS
Symbol V CC VI VO IIK IOK IO PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C
ICC or IGND DC VCC or Ground Current
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
Symbol V CC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V °C ns ns ns
3/10
Others parts begin by m7
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