Details, datasheet, quote on part number: MJ2501
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionComplementary Silicon Power Darlington Transistors
CompanyST Microelectronics, Inc.
DatasheetDownload MJ2501 datasheet
Cross ref.Similar parts: 2SA1045, ECG246, 2SA104, BDX66, BDX66A, ECG24, MJ2500, MJ900, MJ901, PMD13K-60
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Features, Applications


DESCRIPTION The is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 metal case. It is intented for use in power linear and switching applications. The complementary NPN type is the MJ3001.

Symbol Parameter PNP NPN V CBO V CEO V EBO IB P tot T stg Tj Collector-base Voltage = 0) Collector-emitter Voltage = 0) Emitter-base Voltage = 0) Collector Current Base Current Total Dissipation 25 C Storage Temperature Max. Operating Junction Temperature

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CER Parameter Collector Cut-off Current (R BE Collector Cut-off Current = 0) Emitter Cut-off Current = 0) Test Conditions V T case mA 80 Min. Typ. Max. Unit mA V

V CEO(sus) Collector-Emitter Sustaining Voltage 0) V CE(sat) h FE Collector-emitter Saturation Voltage Base-emitter Voltage DC Current Gain

Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative.


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