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Part: MJD127-1
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: Complementary Power Darlington Transistors
Company: ST Microelectronics, Inc.
Datasheet: Download MJD127-1 datasheet File size : 113 kB
Request For quote: Find where to buy MJD127-1
Datasheet text preview:
MJD122-1 / MJD122T4 MJD127-1 / MJD127T4
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1
s s s
Marking MJD122 MJD122 MJD127 MJD127
Package TO-252 TO-251 TO-252 TO-251 (DPAK) (IPAK) (DPAK) (IPAK)
Shipment Tape & Reel Tube Tape & Reel Tube
3
3 2 1
s
s
s
STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE THR OUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP122 AND TIP127 GENERAL PURPOSE SWITCHING AND AMPLIFIER
1
T O- 2 5 1
IPAK
TO-252
DPAK
(Suffix "-1")
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS:
s
DESCRIPTION
Th e MJD122 and MJD127 form complementary N P N - PNP pair. They are manufactured using E p i t a x i a l Base te c h n o l o g y for co s t - e f f e c t i v e performance.
R1 Typ. = 10 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP VCBO VCEO VEBO IC IC M IB Ptot Tstg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 °C Storage Temperature Max. Operating Junction Temperature Value MJD122 MJD127 100 100 5 5 8 0.1 20 65 to 150 150 V V V A A A W °C °C Unit
For PNP types voltage and current values are negative.
August 2002
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
Symbol ICBO ICEO IC E X IEBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Collector Cut-off Current (VBE = -1.5 V) Emitter Cut-off Current (IC = 0) VCB = 100 V VCE = 50 V VCE = 100 V VCE = 100 V VEB = 5 V IC = 30 mA 100 Test Conditions Min. Typ. Max. 10 10 10 500 2 Unit µA µA µA µA mA V
Tj = 125 °C
VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) VCE(sat)* VBE(sat)* VBE(on)* hFE* Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain
IC = 4 A IC = 8 A IC = 8 A IC = 4 A IC = 4 A IC = 8 A
IB = 16 mA IB = 80 mA IB = 80 mA VCE = 4 V VCE = 4 V VCE = 4 V 1000 100
2 4 4.5 2.8 12000
V V V V
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %. For PNP types voltage and current values are negative.
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Safe Operating Area Derating Curve
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
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Others parts begin by mj
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