· EXCELLENT THERMAL STABILITY· COMMON SOURCE CONFIGURATION· POUT 3 W with 17 dB gain @ 500 MHz 12.5 V· NEW RF PLASTIC PACKAGE DESCRIPTION The is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates V in common source mode at frequencies to 1 GHz. PD55003 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003's superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value to +150 Unit °C
Rth(j-c) Junction -Case Thermal Resistance 3.0 °C/W
Symbol IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS 0 V VGS 20 V VDS 10 V VGS 10 V VDS 10 V VGS 0 V VGS 0 V VGS 0 V Test Conditions VDS 28 V VDS 1 A VDS 12.5 V VDS 12.5 V VDS = 12.5 MHz = 1 MHz = 1 MHz Min. Typ. Max. Unit µA V mho pF
Symbol GP D Load mismatch Test Conditions VDD 12.5 V IDQ 50 mA VDD 12.5 V IDQ 50 mA VDD 12.5 V IDQ 50 mA VDD 15.5 V IDQ 50 mA ALL PHASE ANGLES POUT 3 W POUT 3 W POUT 500 MHz = 500 MHz = 500 MHz = 500 MHz Min. Typ. Max. Unit dB % VSWR
GATE DRAIN Typical Input Impedance Typical Drain Load Impedance
TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage
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