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Details, datasheet, quote on part number:S2000AFI
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Datasheet text preview:
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S2000AFI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY
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APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The S2000AFI is manufactured using Multi-Epitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
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ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CE S VC EO VEBO IC I CM P tot V i so l Tstg Tj Parameter C o ll e c t o r -E m i t t e r Voltage (V B E = 0) C o ll e c t o r -E m i t t e r Voltage (I B = 0) Em it t e r -B a s e Voltage (I C = 0) C o ll e c t o r Current C o ll e c t o r Peak Current (t p < 5 ms) T o t a l Dissipation at T c = 25 C In s u la t i o n Withstand Voltage (RMS) from All T h re e Leads to External Heatsink St o r a g e Temperature M a x . Operating Junction Temperature
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Va lu e 15 00 700 10 8 15 50 2500 -6 5 to 150 150
U n it V V V A A W
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C C
March 2003
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S2000AFI
THERMAL DATA
R t h j - c a se T h e r m a l Resistance Junction-case Max 2.5
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S IEBO Pa ra m e te r C o l l e c t o r Cut-off C u r r e n t (V B E = 0) E m i t t e r Cut-off Current ( I C = 0) T e s t Conditions V C E = 1500 V V C E = 1500 V VEB = 5 V I C = 100 mA 700 T C = 125 C
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Min.
Typ.
Ma x. 1 2 10 0
Unit mA mA µA V
V CE O ( s u s ) C o l l e c t o r- E m i t te r S u s t a i n i n g Voltage ( I B = 0) VEBO V C E(s at ) V B E (s at ) E m i t t e r Base Voltage ( I C = 0) C o l l e c t o r- E m i t te r S a t u r a t io n Voltage B a s e - E m i tt e r S a t u r a t io n Voltage I N D U C T I V E LOAD S t o r a g e Time F a l l Time T r a n s i t io n Frequency
I E = 10 mA I C = 4.5 A I C = 4.5 A IB = 2 A IB = 2 A
10 1 1.3
V V V
ts tf fT
I C = 4.5 A h F E = 2.5 V C C = 140 V L C = 0.9 mH L B = 3 µH I C = 0.1 A VCE = 5 V f = 5 MHz
7 0.55 7
µs µs MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area.
Thermal Impedance
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S2000AFI
DC Current Gain Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load (see figure 1)
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