|
Details, datasheet, quote on part number:SA12B5
| |
| Part: | SA12B5 |
| Category: | Discrete => Diodes & Rectifiers => Array Diodes => Termination GTL |
| Description: | Schottky Arrays |
| Company: | ST Microelectronics, Inc. |
| Datasheet: | Download SA12B5 datasheet File size : 115 kB |
| Request For quote: | Find where to buy SA12B5
|
| |
Datasheet text preview:
®
SA12B5 SA16B3 / SA16B6
SCHOTTKY ARRAYS
Application Specific Discretes A.S.D.TM
MAIN APPLICATIONS Any electronic equipment where suitable bus termination is required to avoid signal reflections and distortions : PCs Workstations High frequency processor boards Dataline interface DESCRIPTION Dedicated to bus termination, the Schottky arrays SA12B5, SA16B3 and SA16B6 minimise stray emissions from PCB tracks. They provide suitable termination by avoiding signal reflexions and distortions. FEATURES 12-BIT (SA12) OR 16-BIT (SA16) DUAL SCHOTTKY DIODE ARRAYS REVERSE VOLTAGE : VRRM = 7.5 V FORWARD VOLTAGE VF < 1.3 V
SO-16
BENEFITS Provides impedance matching, and minimizes distortion. Lowers EMI / RFI radiation. Eliminates negative voltage : minimizes risk of latch-up for sensitive ICs. Saves valuable space on board. SO-20
COMPLIES WITH FOLLOWING STANDARD : - MIL STD 883C - Method 3015-6 - class 3 - IEC1000-4-2 level 4
SSOP20
April 1999 - Ed: 1
1/5
SA12B5 / SA16B3 / SA16B6
FUNCTIONAL DIAGRAM (SO-16)
VCC
1 16
FUNCTIONAL DIAGRAM (SO-20 and SSOP20)
VCC
VCC
1
20 VCC
2
19
2
15
3 18
3
14
4 17
4
13
5
16
5
12
6
15
7
14
6
11
8 13
7
10
9 12
VSS
8
9
VSS
VSS
10
11 VSS
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol P VOP VPP Top Tstg TL Tj Parameter and test conditions Power dissipation Maximum operating voltage (VCC - VSS) Maximum electrostatic discharge MIL STD 883C - Method 3015-6 / IEC1000-4-2 contact Operating temperature range (see note 1) Storage temperature range Maximum lead temperature for soldering during 10s Maximum junction temperature SO-20 SO-16 and SSOP20 Value 1250 850 7.5 8 -40 to +85 -55 to +150 260 150 Unit mW V kV °C °C °C °C
Note 1: within the Top range, the SAxx keep on operating. The impacts of the ambient temperature are given by derating curves on the following page.
ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol IR VF Cd Parameter and test conditions Leakage current @ VRRM = 7.5 V Forward voltage (see note 2) Capacitance IPP = 18 mA IPP = 50 mA Vbias = 0V, F = 1MHz Typ. Max. 5 1.05 1.3 16 Unit µA V pF
Note 2: for both pull-up and pull-down schotty diodes.
THERMAL RESISTANCE Symbol Rth(j-a) Parameter Junction to ambient Packages SO-16 and SSOP20 SO-20 Value 140 100 Unit °C/W
2/5
SA12B5 / SA16B3 / SA16B6
Fig1-1: Clamping forward voltage versus peak pulse current (typical values, low level). Fig1-2: Clamping forward voltage versus peak pulse current (typical values, high level).
Ipp(A) 1E+0 1E-1
tp=2.5µs Tj=25°C
Ipp(A) 5.0
Tj=25°C tp=2.5µs
1.0
1E-2 1E-3
Tj=85°C
Tj=-40°C
Vcl(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Vcl(V)
0.1
0
1
2
3
4
5
6
7
Fig 2: Leakage current versus junction temperature (typical values).
Fig 3: Non repetitive surge peak forward current versus pulse duration (rectangular waveform).
IR(µA) 1E+2
VR=7.5V
IFSM(A) 10
Tj initial =25°C
1E+1 1E+0 1E-1 Tj(°C) 1E-2 0 25 50 75 100 125
5
2 tp(µs) 1 1 10 100 1000
Fig 4: Non repetitive surge peak forward current versus initial junction temperature.
Fig 5: Capacitance between input or output and ground versus applied voltage (typical values).
IFSM[Tj] / IFSM[Tj=25°C] 1.2 1.0 0.8 0.6 0.4 0.2
Tj(°C)
Ci/o(pF) 30 28 26 24 22 20 18 16
75 100 125
Vcc=5V F=1MHz Vosc=30mV
Vi/o-gnd(V)
0.0
0
25
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
3/5
|
|
