Details, datasheet, quote on part number: SM6T220AGW
PartSM6T220AGW
CategoryPower Management => Protection and Isolation => Transil->600W
TitleTransil->600W
DescriptionTransil
CompanyST Microelectronics, Inc.
DatasheetDownload SM6T220AGW datasheet
  

 

Features, Applications

FEATURES

PEAK PULSE POWER W (10/1000s) BREAKDOWN VOLTAGE RANGE : From 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED

DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's. ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol PPP P IFSM Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s.

Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.

THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit on recommended pad layout Parameter Value 20 100 Unit C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop

IRM @ VRM Types Uni Mardirectional king GW Bi directional SM6T200CA SM6T220CA max Mar- A V king 1 188 VBR @ IR VCL @ IPP max V A

Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board).

Pulse test < 50 ms. VBR T * (Tamb = 1 MHz. For bidirectional types, capacitance value is divided by 2.

Fig. 2 : Peak pulse power versus exponential pulse duration.

Clamping voltage versus peak pulse current. Exponential waveform 1 ms ------------tp = 10 ms...............

Note : The curves of the figure 3 are specified for a junction temperature of 25C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : VBR T * [Tamb * VBR(25C) For intermediate voltages, extrapolate the given results.


 

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