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Part: STB16NF06L
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Low Voltage
Description: N-channel 60V - 0.07 Ohm - 16A D2PAK StripFET Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB16NF06L datasheet File size : 303 kB
Request For quote: Find where to buy STB16NF06L
Datasheet text preview:
N-CHANNEL 60V - 0.07 - 16A D2PAK STripFETTM POWER MOSFET
TYPE STB16NF06L
s s s s s
STB16NF06L
VD S S 60 V
RDS(on) <0.09
ID 16 A
TYPICAL RDS(on ) = 0.07 EXC EPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
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DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK TO-263 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s M OTO R CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s S OLE NO ID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s A UTO MO TI V E ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID IDM(·) Ptot dv/dt
(1)
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 60 60 ± 16 16 11 64 45 0.3 23 127 -65 to 175 -55 to 175
Unit V V V A A A W W/°C V/ns mJ °C °C
EAS (2) Tstg Tj
(·) Pulse width limited by safe operating area. February 2002
.
(1) ISD 16A, di/dt 210A/µs, VDD V (BR)DSS, Tj T JMAX. (2) Starting T j = 25 oC, ID = 8A, VDD = 30V
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STB16NF06L
THERMAL DATA
Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 3.33 62.5 300 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 16V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA nA
IGSS
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 5 V VGS = 10 V ID = 250 µA ID = 8 A ID = 8 A Min. 1 0.08 0.07 0.10 0.09 Typ. Max. Unit V
DYN AMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 8 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 17 345 72 29 Max. Unit S pF pF pF
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STB16NF06L
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 8 A VDD = 30 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD = 48 V ID = 16 A VGS= 5V Min. Typ. 10 37 7.3 2.1 3.1 10 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 8 A VDD = 30 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 20 12.5 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (·) VSD (*) tr r Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A VGS = 0 50 67.5 2.7 Test Conditions Min. Typ. Max. 16 64 1.3 Unit A A V ns nC A
di/dt = 100A/µs ISD = 16 A VDD = 16 V Tj = 150°C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (·)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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