|
|
Part: STB16NS25
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 250V - 0.23 Ohm - 16A D2PAK Mesh Overlay MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB16NS25 datasheet File size : 303 kB
Request For quote: Find where to buy STB16NS25
Datasheet text preview:
STB16NS25
N-CHANNEL 250V - 0.23 - 16A D2PAK MESH OVERLAYTM MOSFET
TYPE STB16NS25
s s s
VDSS 250 V
RDS(on) < 0.28
ID 16 A
TYPICAL RDS(on) = 0.23 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
1
3
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.
D2PAK
INTERN AL SCH EMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s S WI TH MO DE P OW ER S UP P LIE S (S M P S) s DC-DC CONV E RTE RS F OR TE LE CO M, INDUSTRIAL, AN D LIGHTING EQUIPMENT
s
ABSOLUTE MAXIMUM RA TINGS
Symbol VDS VD G R V GS ID ID ID M ( ) PTOT dv/dt (1) Tstg Tj February 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 16 11 64 140 1 5 65 to 175 175
(1) ISD 16A, di/dt300 A/µs, VDD V(BR)DSS, T jTjMAX
Unit V V V A A A W W/°C V/ns °C °C 1/9
(·)Pulse width limited by safe operating area
STB16NS25
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.9 62.5 300 °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 28 V) Max Value 16 200 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V Min. 250 1 50 ±100 Typ. Max. Unit V µA µA nA
ON ( 1 )
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 8 A Min. 2 Typ. 3 0.23 Max. 4 0.28 Unit V
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 8 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 14 Typ. 15 1270 190 75 Max. Unit S pF pF pF
2/9
STB16NS25
ELECTRICAL CHARACTERISTICS (CONTINUED) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 125 V, ID = 8 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 16 A, VGS = 10V Min. Typ. 15 25 60 8 22 80 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off- Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 125V, ID = 8 A, RG = 4.7, VGS = 10V (see test circuit, Figure 3) Vclamp = 200V, ID = 16 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 75 35 25 30 55 Max. Unit ns ns ns ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Q rr IR R M Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A, VGS = 0 ISD = 16 A, di/dt = 100A/µs VDD = 33V, Tj = 150°C (see test circuit, Figure 5) 270 1.5 11.5 Test Conditions Min. Typ. Max. 16 64 1.5 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Are a
Thermal Impedance
3/9
Others parts begin by st
ST-1 ST-2 ST-3 ST-4 ST-5 ST-6 ST-7 ST-8 ST-9 ST-10 ST-11 ST-12 ST-13 ST-14 ST-15 ST-16 ST-17 ST-18 ST-19 ST-20 ST-21 ST-22 ST-23 ST-24 ST-25 ST-26 ST-27 ST-28 ST-29 ST-30 ST-31 ST-32 ST-33 ST-34 ST-35 ST-36 ST-37 ST-38 ST-39 ST-40 ST-41 ST-42 ST-43 ST-44 ST-45 ST-46 ST-47 ST-48 ST-49 ST-50 ST-51 ST-52 ST-53 ST-54 ST-55 ST-56 ST-57 ST-58 ST-59 ST-60 ST-61 ST-62 ST-63 ST-64 ST-65 ST-66 ST-67 ST-68 ST-69 ST-70 ST-71 ST-72 ST-73 ST-74
|
|
|
