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Part: STB18N20
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: Old PRODUCT: Not Suitable For Design-in
Company: ST Microelectronics, Inc.
Datasheet: Download STB18N20 datasheet File size : 306 kB
Request For quote: Find where to buy STB18N20
Datasheet text preview:
STB18N20
N-CHANNEL 200V - 0.145 - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR
TYPE STB18N20
s s s s s s s
VDSS 200 V
RDS(on) <0.18
ID 18 A
s
s
TYPICAL RDS(on) = 0.145 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VER Y HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THR OUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
3 12
3 1
I2PAK TO-262 (suffix"-1")
D2PAK TO-263 (suffix"T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s S OLE NO ID AND RELAY DRIVERS s R E GU L A T OR S s DC-DC & DC-AC CONVERTERS s M OTO R CONTROL, AUDIO AMPLIFIERS s A UTO MO TI V E ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID IDM(·) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 18 11 72 125 1 60 to 150 150 Unit V V V A A A W W/°C °C °C
(·)Pulse width limited by safe operating area.
December 2000
1/9
STB18N20
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 °C/W °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS EAR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max d < 1%) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) Repetitive Avalanche Energy (pulse width limited by Tj max) Avalanche Current, Repetitive or Not-Repetitive (TC = 100 oC, pulse width limited by Tj max, d < 1%) Max Value 18 50 10 11 Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20V Min. 200 250 1000 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) IDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 9 A 18 Min. 2 Typ. 3 0.145 Max. 4 0.18 Unit V A
VDS > ID(on) x RDS(on)max VGS = 10 V
DYN AMIC
Symbol gfs
(1)
Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitances
Test Conditions VDS > ID(on) x RDS(on)max, ID = 9 A VDS = 25V f = 1 MHz VGS = 0
Min. 6.5
Typ. 13 1600 270 50
Max.
Unit S
Ciss Coss Crss
2100 350 70
pF pF pF
2/9
STB18N20
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G ON
Symbol td(on) tr (di/dt)on Qg Qgs Qgd Parameter Test Conditions Min. Typ. 20 75 470 57 11 26 80 Max. 30 105 Unit ns ns A/µs nC nC nC Turn-on Delay Time Rise Time VDD = 100V ID = 18 A VGS = 10 V RG = 9.1 (see test circuit, Figure 3) Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 100V RG = 9.1 ID = 18 A VGS = 10 V
ID = 18 A VGS = 10 V VDD = Max Rating x 0.8
SW ITCHIN G OFF
Symbol tr(Voff) tr tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 160 V ID = 18 A RG = 9.1 VGS = 10 V (see test circuit, Figure 5) Min. Typ. 40 35 75 Max. 55 50 105 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (·) VSD (*) tr r Qrr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 18 A VGS = 0 300 3.3 22 Test Conditions Min. Typ. Max. 18 72 1.5 Unit A A V ns µC A
IRRM
ISD = 18 A di/dt = 100 A/µs VDD = 100V Tj = 150 °C (see test circuit, Figure 3)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (·)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
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