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Part: STB19NB20-1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 200V 0.5 Ohm 19A TO-220/TO-220FP/I2PAK Powermesh MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB19NB20-1 datasheet File size : 306 kB
Request For quote: Find where to buy STB19NB20-1
Datasheet text preview:
STP19NB20 - STP19NB20FP STB19NB20-1
N-CHANNEL 200V - 0.15 - 19A - TO-220/TO-220FP/I2PAK PowerMESHTM MOSFET
TYPE STP19NB20 STP19NB20FP STB19NB20-1
s s s s s
VDSS 200 V 200 V 200 V
RDS(on) < 0.18 < 0.18 < 0.18
ID 19 A 10 A 19 A
3 1 2
TYPICAL RDS(on ) = 0.15 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO- 2 2 0
TO-220FP
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s S WI TH MODE POWER SUPPLIES (SMPS) s DC-A C CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DG R VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj August 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
I PAK (Tabless TO-220) INTERN AL SCHEMATIC DIAGRAM
2
12
3
Value STP(B)19NB20(-1) 200 200 ± 30 19 12 76 1 25 1 5.5 65 to 150 150
(1)ISD 19 A, di/dt 300A/µs, VDD V (BR)DSS, Tj T JMAX
Unit STP19NB20FP V V V 10 6. 0 76 35 0.28 2500 A A A W W/°C V/ns V °C °C 1/12
(·)Pulse width limited by safe operating area
STP19NB20/FP/STB19NB20-1
THERMAL DATA
TO-220/I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.5 300 TO-220FP 3.57 °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 19 580 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 200 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 9.5 A Min. 3 Typ. 4 0.15 Max. 5 0.18 Unit V
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 9.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3 1000 285 45 Typ. Max. Unit S pF pF pF
2/12
STP19NB20/FP/STB19NB20-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 100V, ID = 9.5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 160V, ID = 19 A, VGS = 10V Min. Typ. 15 15 29 9.5 13 40 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 160V, ID = 19 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 10 10 20 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 19 A, VGS = 0 ISD = 19 A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 2 10 1.5 14.5 Test Conditions Min. Typ. Max. 19 76 1.5 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
3/12
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