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Part: STB19NB20
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 200V - 0.150 Ohm - 19A D2PAK Powermesh MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB19NB20 datasheet File size : 306 kB
Request For quote: Find where to buy STB19NB20
Datasheet text preview:
STB19NB20
N-CHANNEL 200V - 0.150 - 19A D2PAK PowerMESHTM MOSFET
TYPE STB19NB20
s s s s s s
VD S S 200 V
RDS(on) <0.180
ID 19 A
TYPICAL RDS(on) = 0.150 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VER Y LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
D2PAK TO-263 (suffix"T4")
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and sw itching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s S WI TCH MODE POWER SUPPLIES (SMPS) s DC-A C CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID IDM(·) Ptot dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±30 19 12 76 125 1 5.5 60 to 150 150
(1)ISD 19A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
Unit V V V A A A W W/°C V/ns °C °C
(·)Pulse width limited by safe operating area.
December 2000
1/8
STB19NB20
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 °C/W °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 19 580 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 200 1 10 ±100 Typ. Max. Unit V µA µA nA
VDS = Max Rating VDS = Max Rating TC = 125 °C VGS = ± 30 V
ON (*)
Symbol VGS(th) IDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 9.5 A 19 Min. 3 Typ. 4 0.150 Max. 5 0.180 Unit V A
VDS > ID(on) x RDS(on)max VGS = 10 V
DYN AMIC
Symbol gfs
(*)
Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitances
Test Conditions VDS>ID(on) x RDS(on)max ID=9.5A VDS = 25V f = 1 MHz VGS = 0
Min. 3
Typ.
Max.
Unit S
Ciss Coss Crss
1000 285 45
1350 385 60
pF pF pF
2/8
STB19NB20
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. 15 15 29 9.5 13 40 Max. Unit ns ns nC nC nC Turn-on Delay Time Rise Time VDD = 100 V ID = 9.5 A VGS = 10 V RG = 4.7 (see test circuit, Figure 3) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=160V ID=19A VGS=10V
SW ITCHIN G OFF
Symbol tr(Voff) tr tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 160 V ID = 19 A VGS = 10 V RG = 4.7 (see test circuit, Figure 5) Min. Typ. 10 10 20 Max. 15 15 30 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (·) VSD (*) tr r Qrr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 19 A VGS = 0 210 1.5 14.5 Test Conditions Min. Typ. Max. 19 76 1.5 Unit A A V ns µC A
IRRM
ISD = 19 A di/dt = 100 A/µs VDD = 50 V Tj = 150 °C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (·)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
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