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Part: STB200NF03T4
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Low Voltage
Description: N-channel 30V - 0.0032 Ohm - 120A D2PAK/I2PAK/TO-220 StripFET ii Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB200NF03T4 datasheet File size : 306 kB
Request For quote: Find where to buy STB200NF03T4
Datasheet text preview:
N-CHANNEL 30V - 0.0032 - 120A D²PAK/I²PAK/TO-220 STripFETTM II POWER MOSFET
TYPE STB200NF03/-1 STP200NF03
s s s
STP200NF03 STB200NF03 STB200NF03-1
AUTOMOTIVE SPECIFIC
VDSS 30 V 30 V
RDS(on) <0.0036 <0.0036
ID 120 A(**) 120 A(**)
3 1
TYPICAL RDS(on) = 0.0032 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
3 12
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s DC-DC & DC-AC CONVERTERS s S OLE NO ID AND RELAY DRIVERS
D²PAK TO-263
I²PAK TO-262
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SAL ES TYPE STB200NF03T 4 STP200NF03 STB200NF03-1 MARKING B200NF03 P200NF03 B200NF03 PACKAGE D2PAK TO-220 I2PAK PACKAGING TAPE & REEL TU B E TU B E
ABSOLUTE MAXIMUM RATINGS Symbol Parameter V DS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) V DG R VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM(·) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (·) Pulse width limited by safe operating area.
(**) Current Limited by Package
Value 30 30 ± 20 120 120 480 300 2.0 1.5 1.45 -55 to 175
Unit V V V A A A W W/°C V/ns J °C
(1) ISD 120A, di/dt 400A/µs, VDD V (BR)DSS, T j TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 25 V
October 2002
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STB200NF03/-1 STP200NF03
THERMAL DATA
Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case) Max Max Max Typ 0.5 62.5 see curve on page 6 300 °C/W °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA
VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V
IGSS
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 60 A Min. 2 0.0032 Typ. Max. 4 0.0036 Unit V
DYN AMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 60 A Min. Typ. 200 4950 1750 280 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
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STB200NF03/-1 STP200NF03
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 60 A VDD = 15 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 24V ID= 120A VGS= 10V Min. Typ. 30 195 113 32 41 140 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 60 A VDD = 15 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 75 60 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (·) VSD (*) tr r Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A V GS = 0 70 170 5 Test Conditions Min. Typ. Max. 120 480 1.3 Unit A A V ns nC A
di/dt = 100A/µs ISD = 120 A VDD = 25 V Tj = 150°C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (·)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/14
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