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Part: STB200NF04
Category:
Description: N-channel 40V - 120A TO-220/D2PAK/I2PAK StripFET ii Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB200NF04 datasheet File size : 306 kB
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Datasheet text preview:
STP200NF04 STB200NF04 - STB200NF04-1
N-CHANNEL 40V - 120A TO-220/D2PAK/I2PAK STripFETTM II POWER MOSFET
PRELIMINARY DATA TYPE STP200NF04 STB200NF04 STB200NF04-1
s s
VDSS 40 V 40 V 40 V
RDS(on) < 0.0037 < 0.0037 < 0.0037
ID 120 A 120 A 120 A
Pw 310 W 310 W 310 W
12 3
STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
TO-220 I2PAK
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3 1
D2PAK
INTERNAL SCHEMATIC D IAGRAM
APPLICATIONS s HIGH CURRE NT, HIGH S WITCHING S PE E D s A UTO MO TI V E
ORDERING INFORMATION
SALES TYPE STP200NF04 STB200NF04T4 STB200NF04-1 MARKING P200NF04 B200NF04 B200NF04 PACKAGE TO-220 D2PAK I2PAK PACKAGING TUBE TAPE & REEL TUBE
December 2003
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STP200NF04 - STB20 0NF04 - STB200NF04-1
ABSOLUTE MAXIMUM RA TINGS
Symbol VDS VD G R V GS ID (#) ID (#) ID M ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 40 40 ± 20 120 120 480 310 2.07 1.5 1.3 -55 to 175 Unit V V V A A A W W/°C V/ns J °C
( ) Pulse width limited by safe operating area (1) ISD 120A, di/dt 500A/µs, VDD V(BR)DSS, Tj TJMAX. (2) Starting Tj = 25°C, Id = 60A, VDD=30 V (#) Current Limited by Package
THERMAL DATA
TO-220 / I2PAK / D2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max Thermal Resistance Junction-ambient (Free air) Max Maximum Lead Temperature For Soldering Purpose 0.48 See Curve on page 4 62.5 300 °C/W °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED ) ON / OF F
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10V, ID = 90 A 2 Min. 40 1 10 ±100 4 0.0037 Typ. Max. Unit V µA µA nA V
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STP200NF04 - STB200NF04 - STB200NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED) DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V, ID = 90 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 150 5100 1600 600 Max. Unit S pF pF pF
SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 20 V, ID = 90 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 20V, ID = 120 A, VGS = 10V (see, Figure 4) Min. Typ. 30 320 170 30 45 2 10 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 20 V, ID = 90 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) Min. Typ. 140 120 Max. Unit ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 120 A, VGS = 0 ISD = 120 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 85 190 4.5 Test Conditions Min. Typ. Max. 1 20 4 80 1.3 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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