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Part: STB20NE06LT4
Category:
Description: N-channel 60V - 0.06 Ohm - 20A D2PAK StripFET Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB20NE06LT4 datasheet File size : 306 kB
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Datasheet text preview:
N-CHANNEL 60V - 0.06 - 20A D2PAK STripFETTM POWE R MOSFET
TYPE S TB20NE06L
s s s s s s
STB20NE06L
VDSS 60 V
RDS(on) <0.0 7
ID 20 A
TYPICAL RDS(on) = 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GA TE CHARGE 100 oC LOW THRESHOLD DRIVE ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
3 1
D2PAK TO-263 (suffix"T4")
DESCRIPTION This Power Mosfet i s the l atest development of STMicroelectronis unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less c ritical alignment steps t herefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymbol V DS V DGR VGS ID ID IDM(·) Ptot dv/d t (1) Tstg Tj P arameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Fact or Peak Diode R ecovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 20 14 80 70 0.4 7 7 60 to 175 175
(1)ISD 20A, di/dt 3 00A/µs, VDD V(BR)DSS, Tj TJMAX.
U nit V V V A A A W W /° C V /ns °C °C
( ·) Pulse widt h limited by safe operating ar ea.
December 2000
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STB20NE06L
THERMAL DATA
R thj-case R thj-amb Rth c-sink Tj Thermal R esistance J unction-case Thermal R esistance J unction-ambient Thermal R esistance Case-sink Maximum Lead Temperature For Soldering P urpose Max Max Typ 2.14 62.5 0.5 300 °C/W °C/W °C/W °C
AVALANCHE CHARACTERISTICS
Sy mbol IAR EAS Parameter Avalanche Current, Repetitive or Not- Repetitive (pulse width limited b y Tj max) Single Pu lse Av alanche E nergy (star ting Tj = 25 °C, ID = IAR, VDD = 35 V) Max Value 20 100 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Sy mbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS = 0) Gate -body Leakage Current (VDS = 0) Test Cond itions ID = 250 µA VGS = 0 Min. 60 1 10 ±100 Typ. Max. Unit V µA µA nA
VDS = Max R ating VDS = Max Rating TC = 125 °C VGS = ± 20 V
ON (*)
Sy mbol VGS(th) I DS(on) ID(on) Parameter Gate Thre shold Voltage Stati c D rain-source On Resistanc e On S tate Drain Current Test Cond itions VDS = VGS VGS = 5 V VGS = 10 V ID = 250 µA ID = 10 A ID = 10 A 20 Min. 1 0.07 0.06 0.085 0.07 Typ. Max. Unit V A
VDS > ID(on) x RDS(on)max VGS = 10 V
DYNAMIC
Sy mbol gfs (*) C iss Co ss Crss Parameter Forw ard T ransconductanc e Input Capacitance Outp ut Capacitance Reverse Transfer Capacitances Test Cond itions VDS>ID(on) x RDS(on)max ID=10A VDS = 25V f = 1 MHz VGS = 0 Min. 5 Typ. 9 800 125 40 Max. Unit S pF pF pF
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ST B20NE06L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Sy mbol td(on) tr Qg Qgs Q gd P arameter Test Cond itions Min. Typ. 20 45 14 8 4 20 Max. Unit ns ns nC nC nC Turn-on Delay Time Rise Time VDD = 30 V ID = 10 A VGS = 5 V RG = 4.7 (s ee te st circ uit, F igure 3) Tota l Gate Charge Gate -Source Charge Gate -Drain Charge VDD=48V I D=20A VGS=5V
SWITCHING OFF
Sy mbol tr(Voff) tr tc P arameter Off-v oltage Rise Time Fall Time Cross-over Time Test Cond itions I D = 20 A VDD = 48 V VGS = 5 V RG = 4.7 (s ee te st circ uit, F igure 5) Min. Typ. 10 25 42 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Sy mbol ISD ISDM (·) VSD (*) trr Qrr P arameter Source-drain Current Source-drain Current (pulsed) Forw ard O n Vo ltage Reverse Recovery Ti me Reverse Recovery Charge Reverse Recovery Current ISD = 20 A VGS = 0 65 130 4 Test Cond itions Min. Typ. Max. 20 80 1.5 Unit A A V ns nC A
IRRM
di/dt = 100 A/µs ISD = 20 A Tj = 150 ° C VDD = 30 V (s ee te st circ uit, F igure 5)
(*) P ulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (· )Pulse width limit ed by safe operating area.
Safe Operating Area
Thermal Impedance
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