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Part: STB20NM50FD-1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 500V 0.22 Ohm 20A TO-220/I2PAK Fdmesh Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB20NM50FD-1 datasheet File size : 306 kB
Request For quote: Find where to buy STB20NM50FD-1
Datasheet text preview:
STP20NM50FD STB20NM50FD-1
N-CHANNEL 500V - 0.22 - 20A TO-220/I2PAK FDmeshTM Power MOSFET (with FAST DIODE)
TYPE STP20NM50FD STB20NM50FD-1
s s s s s s
VDSS 500V 500V
RDS(on) <0.25 <0.25
Rds(on)*Qg 8.36 *nC 8.36 *nC
ID 20 A 20 A
TYPICAL RDS(on) = 0.22 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANU FACTURING YIELDS
3 1 2
12
3
TO-220
I2PAK (Tabless TO-220)
DESCRIPTION The FD meshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.
INTERNAL SCHEMATIC DIAGRAM
s
APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTER S FOR SMPS AND WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE STP20NM50FD STB20NM50FD-1 MARKING P20NM50FD B20NM50FD-1 PACKAGE TO-220 I PAK
2
PACKAGING TUBE TUBE
August 2003
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STP20NM50FD/STB20NM50FD-1
ABSOLUTE MAXIMUM RA TINGS
Symbol VDS VD G R V GS ID ID ID M ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 5 00 5 00 ±30 20 14 80 1 92 1.2 20 65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C
( ) Pulse width limited by safe operating area (1) ISD 20A, di/dt 200 A/µs, VDD V(BR)DSS, T j TJMAX.
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.65 62.5 300 °C/W °C/W °C
Maximum Lead Temperature For Soldering Purpose
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) Max Value 10 7 00 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON / OF F
Symbol V(BR)DSS IDSS IGSS VGS(th RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V VDS = VGS, ID = 250 µA VGS = 10V, ID = 10A 3 4 0.22 Min. 500 1 10 ±100 5 0.25 Typ. Max. Unit V µA µA nA V
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STP20NM50FD/STB20NM50FD-1
ELECTRICAL CHARACTERISTICS (CONTINUED) DYN AMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 9 1380 290 40 130 2.8 Max. Unit S pF pF pF pF
VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V, ID = 10 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Min. Typ. 22 20 38 18 10 53 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, ID = 20 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 6 15 30 Max. Unit ns ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Q rr IR R M Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100A/µs, VDD = 60V, Tj = 150°C (see test circuit, Figure 5) 245 2 16 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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