|
|
Part: STB20NM50FD
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 500V 0.20 Ohm 20A D2PAK Fdmesh Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB20NM50FD datasheet File size : 306 kB
Request For quote: Find where to buy STB20NM50FD
Datasheet text preview:
STB20NM50FD
N-CHANNEL 500V - 0.20 - 20A D2PAK FDmeshTMPower MOSFET (With FAST DIODE)
PRELIMINARY DATA TYPE STB20NM50FD
n n n n n n
VDSS 500V
RDS(on) < 0.25
ID 20 A
TYPICAL RDS(on ) = 0.20 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
3 1
D2 P AK
DESCRIPTION The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. APPLICATIONS n ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DG R VGS ID ID IDM (l) PTOT dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 20 14 80 192 0.88 6 65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C 1/7
(·)Pulse width limited by safe operating area
November 2001
STB20NM50FD
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.65 62.5 300 °C/W °C/W °C
Maximum Lead Temperature For Soldering Purpose
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) Max Value 10 700 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 500 1 1 00 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 10A Min. 3 Typ. 4 0.20 Max. 5 0.25 Unit V
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 9 1480 285 34 130 1.7 Max. Unit S pF pF pF pF
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
2/7
STB20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250V, ID = 10A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Min. Typ. 24 16 40 13 19 56 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400V, ID = 20A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 9 8.5 23 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20A, VGS = 0 ISD = 20A, di/dt = 100A/µs, VDD = 50V (see test circuit, Figure 5) 220 1.6 15 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
3/7
Others parts begin by st
ST-1 ST-2 ST-3 ST-4 ST-5 ST-6 ST-7 ST-8 ST-9 ST-10 ST-11 ST-12 ST-13 ST-14 ST-15 ST-16 ST-17 ST-18 ST-19 ST-20 ST-21 ST-22 ST-23 ST-24 ST-25 ST-26 ST-27 ST-28 ST-29 ST-30 ST-31 ST-32 ST-33 ST-34 ST-35 ST-36 ST-37 ST-38 ST-39 ST-40 ST-41 ST-42 ST-43 ST-44 ST-45 ST-46 ST-47 ST-48 ST-49 ST-50 ST-51 ST-52 ST-53 ST-54 ST-55 ST-56 ST-57 ST-58 ST-59 ST-60 ST-61 ST-62 ST-63 ST-64 ST-65 ST-66 ST-67 ST-68 ST-69 ST-70 ST-71 ST-72 ST-73 ST-74
|
|
|
