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Part: STB20NM50T4
Category:
Description: N-channel 550V @ Tjmax - 0.20 Ohm - 20A TO-220/TO-220FP/D2PAK/I2PAK Mdmesh MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB20NM50T4 datasheet File size : 306 kB
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Datasheet text preview:
STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1
N-CHANNEL 550V @ Tjmax - 0.20 - 20A TO-220/FP/D2PAK/I2PAK
MDmeshTM MOSFET
TYPE STP20NM50/FP STB20NM50 STB20NM50-1
s s s s s s
V DS S (@Tjmax) 550V 550V 550V
RDS(on) < 0.25 < 0.25 < 0.25
ID 20 A 20 A 20 A
3 1
TYPICAL RDS(on) = 0.20 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANU FACTURING YIELDS
D2PA K TO- 2 2 0
3 1 2
TO-220FP
12
3
I²PAK (Tabless TO-220)
DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RA TINGS
Symbol V GS ID ID IDM (q ) PTOT dv/dt(1) VISO Tstg Tj Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Parameter
INTERNAL SCHEMATIC DIAGRAM
Value STP(B)20NM50(-1) ±30 20 12.6 80 192 1.2 15 -65 to 150 150 2000 20(*) 12.6(*) 80(*) 45 0.36 STP20NM50FP
Unit V A A A W W/°C V/ns V °C °C
(·)Pulse width limited by safe operating area (1) ISD 20A, di/dt 400A/µs, VDD V(BR)DSS, Tj T JMAX. (*)Limited only by maximum temperature allowed
February 2004
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STP20NM50/FP/STB20NM50/STB20NM50-1
THERMAL DATA
TO-220/I²PAK/ D²PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.65 62.5 300 TO-220FP 2.8 °C/W °C/W °C
Maximum Lead Temperature For Soldering Purpose
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = 5 A, VDD = 50 V) Max Value 10 650 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPEC IFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 Min. 500 1 10 ±100 Typ. Max. Unit V µA µA nA
VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C Gate-body Leakage Current (VDS = 0) VGS = ±30V
ON ( 1 )
Symbol VGS(th) RDS(on) Parameter Static Drain-source On Resistance Test Conditions VGS = 10V, ID = 10A Min. 3 Typ. 4 0.20 Max. 5 0.25 Unit V Gate Threshold Voltage VDS = VGS, ID = 250µA
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Rg Parameter Test Conditions Min. Typ. 10 1480 285 34 VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 130 1.6 Max. Unit S pF pF pF pF Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 10A Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance VDS = 25V, f = 1 MHz, VGS = 0
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STP20NM50 /FP/STB20NM50/STB20NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 250 V, ID = 10 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 400 V, ID = 20 A, VGS = 10 V Min. Typ. 24 16 40 13 19 56 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400 V, ID = 20 A, RG = 4.7, VGS = 10 V (see test circuit, Figure 5) Min. Typ. 9 8.5 23 Max. Unit ns ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Q rr IRRM trr Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD = 20 A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 350 4.6 26 435 5.9 27 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns µC A ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area For TO-220 / I²PAK / D²PA K
Safe Operating Area For TO-220FP
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