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Part: STB20NM60A-1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 600V - 0.25OHM - 20A I2PAK/TO-220/TO-220FP MDMESH%99 Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB20NM60A-1 datasheet File size : 306 kB
Request For quote: Find where to buy STB20NM60A-1
Datasheet text preview:
STB20NM60A-1 STP20NM60A - STF20NM60A
N-CHANNEL 600V - 0.25 - 20A I²PAK/TO-220/TO-220FP
MDmeshTMPower MOSFET
TARGET DATA TYPE STB20NM60A-1 STP20NM60A STF20NM60A
s s s s
VDSS 600 V 600 V 600 V
RDS(on) < 0.29 < 0.29 < 0.29
ID 20 A 20 A 20 A
1 2
3
TYPICAL RDS(on) = 0.25 HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
3 12
TO-220
I²PAK
DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
3 1 2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE STB20NM60A-1 STP20NM60A STF20NM60A MARKING B20NM60A P20NM60A F20NM60A PACKAGE I PAK TO-220 TO-220FP
2
PACKAGING TUBE TUBE TUBE
September 2003
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STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RA TINGS
Symbol Parameter Value STB20NM60A-1 STP20NM60A V GS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -55 to 150 20 12.6 80 1 92 1.2 15 2500 ±30 20(*) 12.6(*) 80(*) 45 0.36 STF20NM60A V A A A W W/°C V/ns V °C Unit
( ) Pulse width limited by safe operating area (1) ISD 20A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
I2PAK/TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.65 62.5 300 TO-220FP 2.8 °C/W °C/W °C
Maximum Lead Temperature For Soldering Purpose
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPEC IFIED) ON / OF F
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V VDS = VGS, ID = 250 µA VGS = 10V, ID = 10A 2 3 0.25 Min. 600 1 10 ±100 4 0.29 Typ. Max. Unit V µA µA nA V
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STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED) DYN AMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 11 1500 350 35 130 1.6 Max. Unit S pF pF pF pF
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 200V, ID = 10 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Min. Typ. 25 20 39 10 20 54 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, ID = 20 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 6 11 21 Max. Unit ns ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Q rr Irrm tr r Q rr Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) ISD = 20 A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 390 5 25 510 6.5 26 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns µC A ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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