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Part: STB20NM60A
Category:
Description: N-channel 600V - 0.25 Ohm - 20A I2PAK/TO-220/TO-220FP Mdmesh MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB20NM60A datasheet File size : 306 kB
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Datasheet text preview:
STB20NM60A-1 STP20NM60A - STF20NM60A
N-CHANNEL 650V@Tjmax - 0.25 - 20A I²PAK/TO-220/TO-220FP
MDmeshTM MOSFET
TYPE STB20NM60A-1 STP20NM60A STF20NM60A
s s s s
VDSS @Tjmax 650 V 650 V 650 V
RDS(on) < 0.29 < 0.29 < 0.29
ID 20 A 20 A 20 A
3
TYPICAL RDS(on) = 0.25 HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
3 12
1
2
I²PAK
TO-220
3 1 2
DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s S PE CI FI CA LLY D ES I GNE D FOR A DA PT ORS IN QUASI-RESONANT CONFIGURATION
OR D E R C OD E S
PART NUMBER STB20NM60A-1 STP20NM60A STF20NM60A M A RKIN G B20NM60A P20NM60A F20NM60A PACKAGE I2PAK TO-220 TO-220FP PACKAGING TUBE TUBE TUBE
March 2004
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STB20NM60A-1/STP20NM60A/STF20NM60A
ABSOLUTE MAXIMUM RA TINGS
Symbol Parameter Value STB20NM60A-1 STP20NM60A V GS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -55 to 150 20 12.6 80 192 1.2 15 2500 ±30 20(*) 12.6(*) 80(*) 45 0.36 STF20NM60A V A A A W W/°C V/ns V °C Unit
( ) Pulse width limited by safe operating area (1) ISD 20A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
I2PAK/TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.65 62.5 300 TO-220FP 2.8 °C/W °C/W °C
Maximum Lead Temperature For Soldering Purpose
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPEC IFIED) ON / OF F
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V VDS = VGS, ID = 250 µA VGS = 10V, ID = 10A 2 3 0.25 Min. 600 1 10 ±100 4 0.29 Typ. Max. Unit V µA µA nA V
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STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED) DYN AMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V Test Conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 11 1630 350 33 150 Max. Unit S pF pF pF pF
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300V, ID = 10 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Min. Typ. 20 16 45 8.2 19 60 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 300V, ID = 20 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 46 20 Max. Unit ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Q rr Irrm trr Q rr Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 20 A, di/dt = 100A/µs, VDD = 50 V, Tj = 25°C (see test circuit, Figure 5) ISD = 20 A, di/dt = 100A/µs, VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) 432 5.1 23.6 595 7.3 24.8 Test Conditions Min. Typ. Max. 20 80 1.5 Unit A A V ns µC A ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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