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Part: STB20PF75T4
Category:
Description: P-channel 75V - 0.10 Ohm - 20A Dpak STripFETII Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STB20PF75T4 datasheet File size : 289 kB
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Datasheet text preview:
STB20PF75
P-CHANNEL 75V - 0.10 - 20A D²PAK STripFETTM II POWER MOSFET
TYPE STB20PF75
VDSS 75 V
RDS(on) < 0.12
ID 20 A
TYPICAL RDS(on) = 0.10 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
3 1
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS
D2PAK TO-263 (Suffix "T4") ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(·) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 75 75 ± 20 20 14 80 80 0.53 10 350 -55 to 175 Unit V V V A A A W W/ ° C V/ns mJ °C
(·) Pulse width limited by safe operating area
(1) ISD 20A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 10 A, VDD = 30V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
March 2004
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STB20PF75
THERMAL DATA
Rthj-case Rthj-PCB Tl Thermal Resistance Junction-case Thermal Resistance Junction-PCB Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Ma x Ma x Typ 1.88 34 300 °C/ W °C/ W °C
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20 V Min. 75 1 10 ±100 Typ. Max. Unit V µA µA nA
IGSS
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 10 A Min. 2 Typ. 3 0.10 Max. 4 0.12 Unit V
DYNAMIC
Symbol gfs C iss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 10 A Min. Typ. 15 1150 170 70 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
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STB20PF75
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*)
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 37.5 V ID = 10 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 1) VDD=60V ID=20A VGS=10V (See test circuit, Figure 2) Min. Typ. 20 51 38 7 10 52 Max. Unit ns ns nC nC nC
SWITCHING OFF (*)
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 60 V ID = 10 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 1) Min. Typ. 40 13 Max. Unit ns ns
SOURCE DRAIN DIODE (*)
Symbol ISD ISDM (·) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A VGS = 0 80 250 6.2 Test Conditions Min. Typ. Max. 20 80 1.3 Unit A A V ns nC A
ISD = 20 A di/dt = 100A/µs Tj = 150°C VDD = 25 V (see test circuit, Figure 3)
(*) Pulse width [ 300 µs, duty cycle 1.5 %. (·) Pulse width limited by TJMAX
Safe Operating Area
Thermal Impedance
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