|
|
Part: STD19NE06L
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Low Voltage
Description: N-channel 60V - 0.038 Ohm - 19A Ipak/dpak StripFET Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD19NE06L datasheet File size : 3604 kB
Request For quote: Find where to buy STD19NE06L
Datasheet text preview:
N-CHANNEL 60V - 0.038 - 19A IPAK/DPAK STripFETTM POWER MOSFET
TYPE STD19NE06L
s s s s
STD19NE06L
VD S S 60 V
RDS(on) <0.05
ID 19 A
s
TYPICAL RDS(on) = 0.038 100% AVALANCHE TESTED LOW GATE CHARGE THR OUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 2 1
IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4")
3 1
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s S OLE NO ID AND RALAY DRIVERS s M OTO R CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID IDM(·) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 19 13 76 70 0.3 450 -55 to 175
(1) Starting T j = 25 oC, ID = 9.5 A, VDD = 35 V
Unit V V V A A A W W/°C mJ °C
(·) Pulse width limited by safe operating area September 2002
.
1/9
STD19NE06L
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.14 100 1.5 300 °C/W °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20 V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 5 V VGS = 10 V ID = 250 µA ID = 9.5 A ID = 9.5 A Min. 1 Typ. 1.7 0.048 0.038 Max. 2.5 0.06 0.05 Unit V
DYN AMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 9.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 7 Typ. 14 1350 195 58 Max. Unit S pF pF pF
2/9
STD19NE06L
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 15 A VDD = 30 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD = 48 V ID = 30 A VGS= 5V Min. Typ. 25 105 20 8 10 28 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 15 A VDD = 30 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) ID = 12 A Vclamp = 48 V RG = 4.7, VGS = 5V (Inductive Load, Figure 5) Min. Typ. 50 20 15 40 60 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (·) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A VGS = 0 80 0.18 4.5 Test Conditions Min. Typ. Max. 19 76 1.5 Unit A A V ns µC A
di/dt = 100A/µs ISD = 30 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (·)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
Others parts begin by st
ST-1 ST-2 ST-3 ST-4 ST-5 ST-6 ST-7 ST-8 ST-9 ST-10 ST-11 ST-12 ST-13 ST-14 ST-15 ST-16 ST-17 ST-18 ST-19 ST-20 ST-21 ST-22 ST-23 ST-24 ST-25 ST-26 ST-27 ST-28 ST-29 ST-30 ST-31 ST-32 ST-33 ST-34 ST-35 ST-36 ST-37 ST-38 ST-39 ST-40 ST-41 ST-42 ST-43 ST-44 ST-45 ST-46 ST-47 ST-48 ST-49 ST-50 ST-51 ST-52 ST-53 ST-54 ST-55 ST-56 ST-57 ST-58 ST-59 ST-60 ST-61 ST-62 ST-63 ST-64 ST-65 ST-66 ST-67 ST-68 ST-69 ST-70 ST-71 ST-72 ST-73 ST-74
|
|
|
