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Part: STD1HNC60-1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 600V 4 Ohm 2A Dpak/ipak Powermesh ii MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD1HNC60-1 datasheet File size : 3604 kB
Request For quote: Find where to buy STD1HNC60-1
Datasheet text preview:
S T D1HNC6 0
N-CHANNEL 600V - 4 - 2A - IPAK/DPAK PowerMeshTMII MOSFET
TYPE STD1HNC60
s s s s s
VDSS 600 V
RDS(on) <5
ID 2A
TYPICAL RDS(on) = 4 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251
3 2 1 1
3
DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s S WI TH MODE POWER SUPPLIES (SMPS) s DC-A C CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
s
DP AK TO-252
INTERN AL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DG R VGS ID ID I DM
(1)
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value 600 600 ±30 2 1.3 8 50 0.4 3.5 65 to 150 150
(1)ISD 2A, di/dt 100A/µs, VDD V(BR)DSS, T j TJMAX
Unit V V V A A A W W/°C V/ns °C °C
PTOT dv/dt Tstg Tj
.
(·)Pulse width limited by safe operating area
February 2001
1/9
STD1HNC60
THERMAL DATA
Rthj-case Rthj-amb Rthj-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.5 100 1.5 275 °C/W °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 2 120 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 600 1 50 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 1 A VDS > ID(on) x RDS(on)max, VGS = 10V 2 Min. 2 Typ. 3 4 Max. 4 5 Unit V A
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 1A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 2 228 40 6 Max. Unit S pF pF pF
2/9
STD1HNC60
ELECTRICAL CHARACTERISTICS (CONTINUED) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300V, ID = 1 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 2 A, VGS = 10V Min. Typ. 9 8.5 11.3 2.8 5 15.5 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, ID = 2 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 18 9 27 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A, VGS = 0 ISD = 2A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 480 1032 4.3 Test Conditions Min. Typ. Max. 2 8 1.6 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/9
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